Parameter estimation technique for double-diode model of photovoltaic modules

Nascimento, Aguinaldo José do; Cavalcanti, Marcelo C.; Bradaschia, Fabrício; Silva, Emerson Alves da; Michels, Leandro; Pietta, Luiz P.

doi:10.1109/cobep.2017.8257242

Cited by 10 publications

(3 citation statements)

References 24 publications

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“…where γ n1 and γ n2 represent the proportional constants of the mobility due to the ionized impurities (33), and the mobility due to the lattice vibrations (30), respectively. c) Resistance: Considering the assumptions given in Table I, the resistance definition R ∝ 1/σ, the conductivity expression in (25), and the mobility (34), the resistance of an n-type semiconductor can be expressed as…”

Section: B Series Resistancementioning

confidence: 99%

“…However, the expressions for the series and shunt resistances are still semi-empirical, which might limit the physical representation of the PV-cell/module. A similar study is introduced in [25], but considering a DD configuration. The results show a good accuracy in two different PV-modules for the whole range of voltage at different irradiance conditions and temperatures above RT.…”

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confidence: 99%

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An Accurate Physical Model for PV Modules With Improved Approximations of Series-Shunt Resistances

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Bazmohammadi

et al. 2021

IEEE J. Photovoltaics

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An accurate model to represent the photovoltaic modules is essential to facilitate the efficient deployment of these systems in terms of design, analysis, and monitoring considerations. In this respect, this study proposes a new approach to improve the accuracy of the widely-used five-parameter singlediode model. Two new physical equations are introduced to represent the series and shunt resistances while the other parameters are represented by well established physical expressions. In the proposed model, most of the parameters are in terms of the cell temperature, irradiance, and datasheet values, while a few parameters need to be tuned. The model is compared with four well-known methodologies to extract the parameters of the singlediode and double-diode models. The simulation studies make use of the different I-V characteristics provided in the PVs' datasheets, characteristics extracted from an outdoor module, as well as the ones simulated with the software PC1D. The results show an improved precision of the proposed model to estimate the power characteristics for a wide range of temperatures and irradiances, not only in the MPP, but also in the whole range of voltages. Furthermore, the proposed physical model can be easily applied to other kind of studies where a physical meaning of the PV parameters is of great importance.

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Section: B Series Resistancementioning

confidence: 99%

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confidence: 99%

An Accurate Physical Model for PV Modules With Improved Approximations of Series-Shunt Resistances

Raya-Armenta

Ortega

Bazmohammadi

et al. 2021

IEEE J. Photovoltaics

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show abstract

“…In this sense, some attempts to develop physical-based PV cell models have been reported. Physical expressions for the SD and DD models have been presented in [100] and [101], respectively, with a good accuracy in the whole range of voltage and several light intensities. However, the models have been tested only for temperatures above the RT and the expressions…”

Section: Introductionmentioning

confidence: 99%