Parameter determination of Schottky -barrier diode model using genetic algorithm

Abstract

In this paper, genetic algorithm (GA) has been applied to extract the Schottky-barrier height, ideality factor and series resistance ,this new method presents the effect of wide range temperature of Schottky-barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is discussed. The results found was compared with experimental current-voltage data, it has been confirmed that the proposed method can obtain higher parameter precision with better computational efficiency more easily than other methods.

Parameter Extraction of Schottky Solar Cell in Wide Temperature Range Using Genetic Algorithms

“…The forward bias I-V characteristics, according to thermionic emission of the SBD model with a series resistance, can be expressed as [6,7].…”

“…Where * + I0 the saturation current, I the diode current at bias V, q the electron charge, k the Boltzmann constant, T the absolute temperature, A the effective diode area, A * the effective Richardson constant and equals to 32 A/cm²K² for p-type Si [6,7], Rs the series resistance, Φb the SBH and n the ideality factor. Rs, Φb and n are the unknown parameters and should be determined as accurately as possible.…”

“…Rs, Φb and n are the unknown parameters and should be determined as accurately as possible. The typical I-V characteristics of the SBD model is reported in reference [6,7].…”

“…Metal-semiconductor (MS) is one of the most commonly used semiconductor devices, and it has advantages of low turn-on voltage and high response frequency [1][2][3]. Schottky-barrier diode (SBD) are the basis of a number of semiconductor electronic devices, including microwave diodes, field-effect transistors (FETs), solar cells, and photo detectors [4][5][6][7]. Determining the fundamental SBD model parameters including Schottky-barrier height (SBH) and ideality factor, which must be taken into account in practical application, plays an important role in the designing and manufacturing process [6][7][8].…”

“…Schottky-barrier diode (SBD) are the basis of a number of semiconductor electronic devices, including microwave diodes, field-effect transistors (FETs), solar cells, and photo detectors [4][5][6][7]. Determining the fundamental SBD model parameters including Schottky-barrier height (SBH) and ideality factor, which must be taken into account in practical application, plays an important role in the designing and manufacturing process [6][7][8]. The Schottky barrier junctions can operate as a solar cell and the main advantage of Schottky barrier solar cells is easiness of production, as they do not require high temperature processing, and thus, the processing cost is remarkably reduced [9,10].…”