“…Along with discovering novel TE compounds and the continued interest in developing efficient chalcogenide TE materials, [27][28][29][30][31][32] lead-free MnTe, an antiferromagnetic (AFM) transition metal-semiconductor, has shown potential as an efficient TE material. [33,34] This material has been investigated since the late 1930s [35,36] as either undoped [37][38][39][40] or doped compounds such as MnTeLi, [38] (GeTe) 1Àx (MnTe) x , [41,42] (Ge, Pb) 1Àx Mn x Te, [43] Cd 1Àx Mn x Te, [44] Sn 1Àx Mn x Te, [45] and Zn 1Àx Mn x Te. [46] MnTe has a Néel temperature (T N ) of 307-310 K [47,48] and a bandgap of 1.27 eV, [47,49,50] with a high Seebeck coefficient (%450 μV K À1 ) [49,51] and spin-wave excitation (magnon) drag effect.…”