Paramagnetic electronic susceptibility of the thin films

Balcerzak, T.

doi:10.1016/j.tsf.2006.08.008

Cited by 4 publications

(5 citation statements)

References 14 publications

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“…Taking into account that z = const, the differences between various curves illustrate the size effects. The abrupt changes of −E IMC vs. ρ are the manifestation of the quantum size effects which are caused by discretization of the Fermi surface in thin films and analogous changes in the density of states at the Fermi level [12]. In Fig.…”

Section: Numerical Results and Discussionmentioning

confidence: 94%

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The RKKY Coupling of Two Magnetically Doped Monolayers in Thin Films

Szałowski

Balcerzak

2008

Acta Phys. Pol. A

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The Gauss-type exchange contact potential is applied to derive the Ruderman-Kittel-Kasuya-Yosida interaction in thin films. The interlayer magnetic coupling energies and the critical Curie/Néel temperatures are calculated. The quantum size effects are found to cause long-range oscillatory behavior of these quantities vs. film thickness, with the period much longer than the usual RKKY characteristic oscillations.

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Section: Numerical Results and Discussionmentioning

confidence: 94%

“…In Eq. (4) χ p,y denotes the paramagnetic susceptibility of the charge carriers in thin film, whose explicit form has been derived in [12]. In order to avoid a redundant repetition of the formalism this susceptibility will not be characterized here.…”

Section: Theorymentioning

confidence: 99%

The RKKY Coupling of Two Magnetically Doped Monolayers in Thin Films

Szałowski

Balcerzak

2008

Acta Phys. Pol. A

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“…The dependence of the matrix composition on depth was obtained by measuring the erosion speed and at the end of each analysis the depth of the erosion crater by means of a Tencor Alpha Step profilometer with a typical uncertainty of about 1 nm. The details are described elsewhere [ 27 ].…”

Section: Figurementioning

confidence: 99%

Structure and Optical Properties of Magnetron Sputtered SiO<sub>x</sub> Layers with Silicon Nanoparticles

Khomenkova

Korsunska

Stara

et al. 2008

DDF

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The properties of SiOx layer prepared by magnetron sputtering is studied by photoluminescence Auger and SIMS methods. The depth distribution of emission characteristics and chemical composition is obtained. It is shown that as-sputtered SiOx layers are non-emitted and characterized by homogeneous enough chemical composition. High-temperature annealing in nitrogen atmosphere stimulates not only the Si nanocrystal formation but also the redistribution of silicon and the appearance of Si depleted region near layer-substrate interface. The last process is found to be dependent on excess Si content. It is found that decrease of silicon content in the depth of annealed layers is followed by the decrease of particle sizes that is proved by the blue shift of photoluminescence maximum. The possible reasons of the appearance of Si depleted region are discussed.

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“…The symbol χ l,y denotes the paramagnetic susceptibility of the electrons in the ultrathin film, which has been derived elsewhere, 26,27 while χ 0 is the Pauli susceptibility of 2D system. The energy constant C in Eq.…”

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confidence: 99%

“…The localized spins reveal the effective gyromagnetic factor 28 where g S and g e are the gyromagnetic factors of localized spins without RKKY interaction and the free-electrons, respectively. τ F is the number of subbands, splitted due to the discretization of Fermi surface in thin film.…”

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confidence: 99%

Antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction

Szałowski

Balcerzak

2009

Phys. Rev. B

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We study a model thin film containing diluted bilayer structure with the RKKY long-range interaction. The magnetic subsystem is composed of two magnetically doped layers, separated by an undoped nonmagnetic spacer and placed inside a wider film modelled by a quantum well of infinite depth. We focus our study on the range of parameters for which the antiferromagnetic coupling between the magnetic layers can be expected. The critical temperatures for such system are found and their dependence on magnetic layer thickness and charge carriers concentration is discussed. The magnetization distribution within each magnetic layer is calculated as a function of layer thickness. The external field required to switch the mutual orientation of layer magnetizations from antiferromagnetic to ferromagnetic state is also discussed.

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Paramagnetic electronic susceptibility of the thin films

Cited by 4 publications

References 14 publications

The RKKY Coupling of Two Magnetically Doped Monolayers in Thin Films

The RKKY Coupling of Two Magnetically Doped Monolayers in Thin Films

Structure and Optical Properties of Magnetron Sputtered SiO<sub>x</sub> Layers with Silicon Nanoparticles

Antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction

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