2019
DOI: 10.1149/ma2019-02/27/1241
|View full text |Cite
|
Sign up to set email alerts
|

Parallel Programming of an Ionic Floating-Gate Memory Array for Scalable Neuromorphic Computing

Abstract: Neuromorphic computers could overcome efficiency bottlenecks inherent to conventional computing through parallel programming and read out of artificial neural network weights in a crossbar memory array. However, selective and linear weight updates and <10nA read currents are required for learning that surpasses conventional computing efficiency. We introduce an ionic floating-gate memory array [1] based upon a polymer redox transistor connected to a volatile conductive-bridge memory (CBM). Selective and lin… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
59
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
6
3

Relationship

1
8

Authors

Journals

citations
Cited by 36 publications
(61 citation statements)
references
References 0 publications
2
59
0
Order By: Relevance
“…8(b)), this will become an increasingly important trade-off when optimizing for higher values of X in radix-X. The effect of decreasing equivalent resistance can be partially mitigated by reducing the read voltage, where state-of-the-art crossbar arrays have demonstrated read currents of under 10nA [33].…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…8(b)), this will become an increasingly important trade-off when optimizing for higher values of X in radix-X. The effect of decreasing equivalent resistance can be partially mitigated by reducing the read voltage, where state-of-the-art crossbar arrays have demonstrated read currents of under 10nA [33].…”
Section: Discussionmentioning
confidence: 99%
“…To achieve analog or multi-bit states, the width of the filament must be precisely modulated, which is challenging in practice. It often requires the use of lower write voltages applied across longer durations, which super-exponentially increase the time of write cycles [33]. Therefore, many realizations of crossbar arrays employ conservative design techniques and treat metal-oxide memory cells as single-bit storage [34].…”
Section: A Resistive Switching In Memristorsmentioning
confidence: 99%
“…Memristors are now ubiquitous in neuromorphic computing literature due to their long retention [2]- [4], excellent scalability [5], [6], fast read and write speeds [7], [8], compatibility with CMOS technology [9]- [12], and precise weight updates [13], [14]. The development of dense integrated structures with 3-D stacked crossbar arrays enables an increase in the throughput for a given chip area, but thus far, target applications of 3-D RRAM have mostly been limited to digital memory [16]- [23].…”
Section: Introductionmentioning
confidence: 99%
“…Two-dimensional (2D) materials with atomic thickness and flatness have shown great potential for numerous applications in electronics (14)(15)(16)(17) and optoelectronics (18)(19)(20). The vdW vertical heterostructures formed by stacking different 2D materials accommodate an abundance of electronic and optoelectronic properties (21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32), which may be exploited to mimic hierarchical architecture and functions of retinal neurons (33)(34)(35)(36)(37)(38)(39)(40)(41)(42)(43) in a natural manner to implement a neural network vision sensor.…”
mentioning
confidence: 99%