Abstract:Parallel thin-film transistor-phase-change memory (TFT-PcRAM) is a next-generation large-capacity nonvolatile memory with a vertically integrated structure. Planar In-Ga-Zn-O (IGZO)-TFT and nanoscale PcRAM were fabricated and analyzed as active selectors and resistance-switching memory in this work. After confirming their compatibility, Ge 2 Sb 2 Te 5 (GST225) film by atomic layer deposition was combined with the IGZO-TFT to fabricate a 1 transistor-1 PcRAM parallel circuit. A direct current− voltage sweep and… Show more
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