Paper No S12.4: Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top‐Gate Thin‐Film Transistors

Abstract

In this work, plasma enhanced atomic layer deposition process (PEALD) was used for the depositing SiO 2 as the insulating layer with various plasma power. We investigated the effect of plasma power on the TFT performance in top-gate structure.

Performance and Stability Enhancement of In–Sn–Zn–O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition

“…Nevertheless, relatively few reports on the dielectric properties of SiO 2 grown by PEALD are available in the literature, especially when gate insulators for TFTs are concerned. Most of the former studies focus on PEALD SiO 2 films synthesized at high growth temperature (>250 °C) , or using different plasma powers . Although some oxide TFTs based on PEALD SiO 2 dielectrics were reported to exhibit superior mobility [∼40 cm 2 /(V s)], these reports did not further investigate the reasons for the high device performance or the possibility to achieve suitable gate insulators at temperatures lower than 200 °C.…”