Paper-Based Flexible Photodetector Functionalized by WSe<sub>2</sub> Nanodots

Pataniya, Pratik M.; Zankat, Chetan K.; Tannarana, Mohit; Sumesh, C.K.; Som, Narayan N.; Solanki, G. K.; Patel, K. C.; Pathak, V. M.; Jha, Prafulla K.

doi:10.1021/acsanm.9b00266

Cited by 123 publications

(102 citation statements)

References 37 publications

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“…These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor. Advancing the findings of previous reports, our experimental results reveal that the photocurrent is weakly wavelength dependent [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. The α roughly deviates by 30% at the three different wavelengths, which is much smaller than the reported values.…”

Section: Resultssupporting

confidence: 86%

“…This characteristic is more flexible and stable for a wide range of potential applications. The broadband light response has been observed in many low-dimensional systems [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor.…”

Section: Resultsmentioning

confidence: 99%

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The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Huang

Hung

Chou

et al. 2021

Sensors

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Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Huang

Hung

Chou

et al. 2021

Sensors

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“…TMDCs present a good alternative to the conventional semiconductors for flexible optoelectronics owing to their better mechanical flexibility and robustness [26,115,116]. Flexible PDs on substrates like polyimide (PI), polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) have been demonstrated using TMDC materials.…”

Section: Flexible Devicesmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…First, due to the existence of the trap centers of holes in SnS 2 , [28,29] holes are captured; thus, their lifetime increases and the recombination of electronhole pairs is simultaneously impeded, resulting in a high responsivity. In addition, a large specific surface area [30] and the oxygen-assisted and H 2 O-assisted mechanisms [31,32] also play important roles in improving responsivity.…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS₂ van der Waals Heterostructure

Cui

Han

Xing

et al. 2021

Physica Status Solidi (a)

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SnS2 exhibits a high absorbance coefficient and strong photoconductive properties in ultraviolet–visible regions, making it a promising photodetector with excellent photoelectric performance. The characteristic of a large yield of photocarriers in SnS2 with the high mobility of graphene is combined and a vertical graphene/SnS2 van der Waals heterostructure photodetector is fabricated, which can obtain effective electron–hole pairs separation under the built‐in electric field, thus having a high photoresponse. It has the characteristics of ultrahigh responsivity (6.35 × 105 A W−1) and high external quantum efficiency (2.15 × 108%) under 365 nm light. Such high‐performance graphene/SnS2 heterostructures may find promising applications in future optoelectronic devices.

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Paper-Based Flexible Photodetector Functionalized by WSe₂ Nanodots

Cited by 123 publications

References 37 publications

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Optoelectronic and photonic devices based on transition metal dichalcogenides

Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS₂ van der Waals Heterostructure

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Paper-Based Flexible Photodetector Functionalized by WSe2 Nanodots

Cited by 123 publications

References 37 publications

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Optoelectronic and photonic devices based on transition metal dichalcogenides

Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS2 van der Waals Heterostructure

Contact Info

Product

Resources

About

Paper-Based Flexible Photodetector Functionalized by WSe₂ Nanodots

Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS₂ van der Waals Heterostructure