Panning ideal In(Ga)As(P)/InGaP quantum dot structures for intermediate band solar cells
E C Weiner,
R Jakomin,
R M S Kawabata
et al.
Abstract:The In(Ga)As(P)/InGaP quantum dot system has been investigated for quantum dot intermediate band solar cells. In order to obtain optical transition energies compatible with the ideal ones required for the device record performance, namely: 1.95 eV, 1.24 eV and 0.7 eV, first disordered InGaP with a bandgap of 1.91 eV as the barrier material has been obtained. Then InAs QDs nucleated at 490 °C, 1.32 MLs thick, covered by a 3-4 nm GaAs capping layer and In-flushed provided radiation emission in the energy interva… Show more
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