Palladium in GaN: A<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>d</mml:mi></mml:mrow></mml:math>metal ordering ferromagnetically in a semiconductor

Osuch, K.; Lombardi, E. B.; Adamowicz, Ludwik

doi:10.1103/physrevb.71.165213

Cited by 42 publications

(23 citation statements)

References 33 publications

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“…This method allows us to establish [3,21] whether these two magnetically ordered structures are energetically stable, and to determine which of these structures correspond to a lower minimum of the total energy, if the material at all orders magnetically, similar to previous calculations of Mn (Ref. [21]) and Pd (Ref.…”

Section: Methodsmentioning

confidence: 93%

“…These spintronic applications hold the prospect of greatly increasing the functionality of semiconductors by not only using the charge of the electron, but also its spin [2]. Up to now mainly III-Vand II-VI semiconductors such as GaN, GaAs, and ZnO, amongst others [3][4][5], have been considered in the search for magnetically ordered semiconductors for spintronic applications.…”

Section: Introductionmentioning

confidence: 99%

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Co in diamond: Ferromagnetic ordering of a transition metal in diamond

Lombardi

2008

Diamond and Related Materials

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Section: Methodsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Co in diamond: Ferromagnetic ordering of a transition metal in diamond

Lombardi

2008

Diamond and Related Materials

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“…The destruction of dangling bonds will make the defective system nonmagnetic as in the case of V C (C vacancy). In the cases of the reported magnetism induced by nonmagnetic dopings, the dopants all have large electronegativity difference from the neighboring host atoms [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Due to the strong electronegativity of B and Al, they covalently bond with the neighboring host C atoms.…”

Section: The Local Magnetic Moments Induced By Nonmagnetic Dopantsmentioning

confidence: 97%

“…Besides Cu, other intrinsic nonmagnetic elements such as Ca, Mg, Pd, C and N are also considered as potential dopants. Reported cases include Ca and Pd dopants in GaN [24,25], Mg dopant in AlN [26],, CaO [30], and SrO [31]. These studies suggest the possibility of fabricating DMSs using the intrinsic nonmagnetic dopants.…”

mentioning

confidence: 98%

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

Liu

2010

Sci. China Phys. Mech. Astron.

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Magnetism induced by the nonmagnetic dopants in the zinc-blende SiC (3C-SiC) is investigated by first-principle calculations. The atoms of the first 20 elements in the periodic table except inert gas are used to replace either Si or C atoms as dopants. We find that some nonmagnetic substitutional dopants (mainly the Group IA, Group IIA, Group IIIB, and Group VIIB elements) prefer the spin-polarized ground states with local magnetic moments. In general, the condition for obtaining the local magnetic moments and the magnetic ground state requires that the dopants are p-type and have large electronegativity difference from the neighboring host atoms. The magnetic moments can be tuned over a range between 1 μ B and 3 μ B by doping with the nonmagnetic elements. The nearest-neighbor exchange couplings J 0 between the local magnetic moments are quite large and the codoping method is proposed to increase the dopant concentration. These imply that the nonmagnetic doping in SiC may exhibit collective magnetism. Moreover, the Group IIA Mg and Ca atoms substituting the preferred Si atoms favor the ferromagnetic ground states with the half-metallic electronic properties, which suggests that Mg or Ca substitutional doping on the Si sites in SiC could be a potential route to fabricating the diluted magnetic semiconductors. nonmagnetic dopant, magnetism, SiC, diluted magnetic semiconductor, first-principle calculation Diluted magnetic semiconductors (DMSs) that combine functions of semiconductors and magnetic materials have attracted much interest for their potential applications in spintronic semiconductor devices [1-3]. Since Dietl et al. theoretically predicted that room temperature ferromagnetism might exist in wide-band-gap semiconductors using the Zener model [4,5], DMSs are usually fabricated by introducing magnetic transition metals (TM) (e.g., V, Cr, Mn, Fe, Co, and Ni) into the conventional II-VI [6-8] and III-V [9-11] type semiconductors and other wide-band-gap semiconductors including SiC [12,13] and TiO 2 [14,15]. The doped magnetic TM ions tend to form magnetic clusters or secondary ferromagnetic (FM) phases, which is certainly a disadvantage. Obviously, these TM elements contain partially filled 3d or 4 f shells. Traditionally, the strongly localized nature of the 3d and 4 f states, coupled with their high degree of degeneracy, favors the spin-polarized electron configurations and leads to the formation of local moments. Recommended by LONG GuiLuHowever, magnetism can also be induced by the intrinsic nonmagnetic dopants in many supposedly nonmagnetic materials or even such materials involving only s-and p-electron elements, which attracts much attention due to the potentially extensive applications as well as the light thrown on understanding the newly physical origins of magnetism. Calculations based on the density functional theory (DFT) predict that single Cu atom doped in ZnO favors the FM ground state with a finite magnetic moment [16][17][18]. The experimental observations of the room temperature ferromagne...

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“…Recent theoretical investigations have reported the ferromagnetic ordering of normally NM materials in GaN [15][16][17][18]. For 4d-metal Pd in GaN, Pd orders ferromagnetically in GaN [15].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure and Magnetic Moments of Copper-atom in/on GaN Semiconductor

Kang¹,

Lee²

2010

Journal of Magnetics

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The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of 0.54 µ B per supercell.

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Palladium in GaN: A4dmetal ordering ferromagnetically in a semiconductor

Cited by 42 publications

References 33 publications

Co in diamond: Ferromagnetic ordering of a transition metal in diamond

Co in diamond: Ferromagnetic ordering of a transition metal in diamond

Magnetism induced by nonmagnetic dopants in zinc-blende SiC: First-principle calculations

Electronic Structure and Magnetic Moments of Copper-atom in/on GaN Semiconductor

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