PdGa, cubic, P2 13( no. 198), a =4.89695(6) Å, V =117.4 Å 3 , Z =4,R gt(F) =0.024, wRref(F 2 ) =0.035, T =295 K.
Source of materialLarge single crystals of PdGa were obtained by Czochralski growth from the melt as described in [1]. The melt consisted of Pd (99.9 %, ChemPur) and Ga (99.99 %, ChemPur) in an atomic ratio of 45:55. The metals were pre-reacted in glassy carbon crucibles under inert argon atmosphere in ahigh-frequency induction furnace. Single crystals used in this study were obtained from the bottom of the as grown Czochralski crystal and were annealed at 800°Cfor 24 hindynamic vacuum at 10 -6 mbar prior to the X-ray diffraction experiments. For the lattice parameter determination a small part of the bottom of the large crystal was crushed and annealed as described above. WDXS measurements were performed on aC AMECA SX100 (W filament, 25 kV) with Pd50Ga50 (by chemical analysis via ICP-OES) as standard.
Experimental detailsSingle crystal data were collected using aRigaku R-axis SPIDER diffractometer with monochromated Ag K a radiation. Determination and refinement of the crystal structure were performed with the SHELX-97 software [2]. Spence [3] defined the two absolute structures of the FeSi type as form A( Fe in 4a with x = 0.1358, Si in 4a with x =0.844) and form B(Fe in 4a with x = 0.8642, Si in 4a with x =0.156). Models of both absolute structures were refined for PdGa without twin model and resulted in considerable differences in R gt,A =0 .028 and Rgt,B =0 .040, respectively. Further refinement of form Aa si nversion twin resulted in aF lack parameter of 0.05(1), confirming the proper parameter set. Refining site occupancy for both atoms resulted in fully occupied sites within one e.s.d. This excludes mutual site occupation in the crystal as is expected due to the covalent interactions in the compound [4].