Palladium-Catalyzed Coupling Reactions for the Functionalization of Si Surfaces: Superior Stability of Alkenyl Monolayers

Collins, Gillian; O’Dwyer, Colm; Morris, Michael A.; Holmes, Justin D.

doi:10.1021/la402480f

Cited by 15 publications

(21 citation statements)

References 60 publications

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“…Due to the rich and established chemistry that can be carried out on the semiconductor surfaces, many aspects of the MLD process such as the initial surface preparations, molecular footprints, choice of capping layer and the rapid-thermal-anneal recipe can all be optimised and tailored to the particular process, material and required dopant concentration and depth. [2][3][4][5][6][7][8][9][10][11][12] Figure 1 displays an example of a typical MLD process using commercially available triallylphosphine. Ho et al were the first to report the MLD process on Si where allylboronic acid pinacol ester in a 25 % v/v solution in mesitylene was used to passivate a H-terminated Si surface with a boroncontaining monolayer.…”

Section: Monolayer Doping On Simentioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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Access to the full text of the published version may require a subscription. after most spin-on-doping processes which are often difficult to remove. In-situ doping of nanostructures is especially common for bottom-up grown nanostructures but problems associated with concentration gradients and morphology changes are commonly experienced. Monolayer doping (MLD) has been shown to satisfy the requirements for extended defect-free, conformal and controllable doping on many materials ranging from traditional silicon and germanium devices to emerging replacement materials such as III-V compounds but challenges still remain, especially with regard to metrology and surface chemistry at such small feature sizes. This article summarises and critically assesses developments over the last number of years regarding the application of gas and solution phase techniques to dope silicon-, germanium-and III-V-based materials and nanostructures to obtain shallow diffusion depths coupled with high carrier concentrations and abrupt junctions. Rights3

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Section: Monolayer Doping On Simentioning

confidence: 99%

Chemical approaches for doping nanodevice architectures

et al. 2016

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“…242 These features also make convenient the use of Pd-catalyzed coupling methods for interfacial reactions with immobilized organic films. 243,244 Pd-Catalyzed coupling reactions are commonly carried out at moderate temperatures (50-100 1C) to achieve high conversion yields. Thus, one of the fundamental prerequisites to perform this kind of catalyzed process on an anchored organic film is the thermal stability of the bond linking the organic layer to the underlying substrate.…”

Section: Pd-catalyzed C-c Couplingmentioning

confidence: 99%

A post-functionalization toolbox for diazonium (electro)-grafted surfaces: review of the coupling methods

2021

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“…Phenylboronic and fluorinated phenylboronic acids can serve as attractive spectroscopic and chemical labels. These compounds in solution have been used to modify organic monolayers prepared on silicon, 21,22 metal oxides, 23,24 and metals. 25,26 The boronic acid functionality (−B(OH) 2 ) has high affinity for diols and can be used for selective biosensing in nucleic acid recognition and sugar or glycoprotein detection.…”

Section: Introductionmentioning

confidence: 99%

Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100)

et al. 2021

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The reactions of boric acid and 4-fluorophenylboronic acid with H- and Cl-terminated Si(100) surfaces in solution were investigated. X-ray photoelectron spectroscopy (XPS) studies reveal that both molecules react preferentially with Cl–Si(100) and not with H–Si(100) at identical conditions. On Cl–Si(100), the reactions introduce boron onto the surface, forming a Si–O–B structure. The quantification of boron surface coverage demonstrates that the 4-fluorophenylboronic acid leads to ∼2.8 times higher boron coverage compared to that of boric acid on Cl–Si(100). Consistent with these observations, density functional theory studies show that the reaction of boric acid and 4-fluorophenylboronic acid is more favorable with the Cl- versus H-terminated surface and that on Cl–Si(100) the reaction with 4-fluorophenylboronic acid is ∼55.3 kJ/mol more thermodynamically favorable than the reaction with boric acid. The computational studies were also used to demonstrate the propensity of the overall approach to form high-coverage monolayers on these surfaces, with implications for selective-area boron-based monolayer doping.

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Palladium-Catalyzed Coupling Reactions for the Functionalization of Si Surfaces: Superior Stability of Alkenyl Monolayers

Cited by 15 publications

References 60 publications

Chemical approaches for doping nanodevice architectures

Chemical approaches for doping nanodevice architectures

A post-functionalization toolbox for diazonium (electro)-grafted surfaces: review of the coupling methods

Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100)

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