2020
DOI: 10.1140/epjst/e2019-900086-6
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Pair spin–orbit interaction in low-dimensional electron systems

Abstract: The pair spin-orbit interaction (PSOI) is the spin-orbit component of the electron-electron interaction that originates from the Coulomb fields of the electrons. This relativistic component, which has been commonly assumed small in the low-energy approximation, appears large and very significant in materials with the strong SOI. The PSOI, being determined by the spins and momenta of electrons, has highly unusual properties among which of most interest is the mutual attraction of the electrons in certain spin c… Show more

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Cited by 12 publications
(10 citation statements)
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“…It is thus possible to significantly increase the wire's doping with a small gate voltage. The origin of the SO coupling in this setup is the inhomogeneous distribution of the charge along the radius of the wire, which is sometimes called pair SO coupling in the literature [78]. In the right pane, we can see that the red curve is in good agreement with the experimental data, whereas the blue one deviates, especially at large V gate , due to the large electrostatic potentials involved.…”
Section: Comparison To Experimentssupporting
confidence: 60%
“…It is thus possible to significantly increase the wire's doping with a small gate voltage. The origin of the SO coupling in this setup is the inhomogeneous distribution of the charge along the radius of the wire, which is sometimes called pair SO coupling in the literature [78]. In the right pane, we can see that the red curve is in good agreement with the experimental data, whereas the blue one deviates, especially at large V gate , due to the large electrostatic potentials involved.…”
Section: Comparison To Experimentssupporting
confidence: 60%
“…can essentially affect the dynamics of interacting electrons and result in new collective states. The pair SOI (PSOI) produced by the Coulomb fields Eðr i À r j Þ of interacting electrons has the following form [3]…”
mentioning
confidence: 99%
“…Усиление межэлектронного взаимодействия подтверждается экспериментами с подвешенными наноструктурами [7-10]. Кроме этого было показано, что электрон-электронное взаимодействие в тонких пленках может иметь качественные отличия, проявляющиеся в притяжении и спаривании электронов [11][12][13]. Особенностью подвешенных наноструктур является также отсутствие отвода тепла непосредственно через подложку и связанный с этим характер явлений теплопереноса [14,15].…”
Section: Introductionunclassified