Packaged Long Cavity Hybrid III-V/Si<sub>3</sub>N<sub>4</sub> Mode-Locked Laser With Improved Modulation Efficiency

Ibrahimi, Yasmine; Boust, Sylvain; Wilmart, Quentin; Paret, Jean-Francois; Garreau, Alexandre; Mekhazni, Karim; Fortin, Catherin; Duport, François; Baili, Ghaya; Charbonnier, Phlippe; Blache, F.; Gariah, H.; Garcia, Stephanie; Vivien, Laurent; Dijk, Frédéric van

doi:10.1109/jqe.2023.3243603

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“…The R-SOA chip [3] is made at III-VLab. It is fabricated on an InP wafer containing a multi-quantum-well (QW) made of six 8 nm thick compressively strained QWs as the active region.…”

Section: Inp Chipsmentioning

confidence: 99%

Hybrid InP/SiN photonic integrated circuits for RF systems and optical sensing

Van Dijk,

Boust,

Duport

et al. 2024

Smart Photonic and Optoelectronic Integrated Circuits 2024

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In this paper we present the developments carried out at III-V lab in collaboration with CEA-Leti on the hybrid integration of III-V chips with ultra-low-loss silicon nitride circuits for optical detection and RF systems. Different types of hybrid circuits will be presented: 1-a narrow linewidth laser based on the combination of an InP R-SOA and a long Bragg grating on SiN, 2-a Kerr frequency comb based on a high-power InP DFB laser butt-coupled to a high-Q SiN micro-ring, 3-a long cavity mode-locked laser based on an R-SOA and a SiN circuit with a delay line and a Bragg grating.

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“…The R-SOA chip [3] is made at III-VLab. It is fabricated on an InP wafer containing a multi-quantum-well (QW) made of six 8 nm thick compressively strained QWs as the active region.…”

Section: Inp Chipsmentioning

confidence: 99%