P3HT as a pinhole blocking back contact for CdTe thin film solar cells

Major, Jonathan D.; Phillips, Laurie J.; Turkestani, Mohammed Al; Bowen, Leon; Whittles, Thomas J.; Dhanak, Vin; Durose, K.

doi:10.1016/j.solmat.2017.07.005

Cited by 30 publications

(19 citation statements)

References 40 publications

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“…On the other hand, if spiro-OMeTAD is deposited on the top of MAPI, then any accidental contact between the n-Si and spiro-OMeTAD is not expected to be consequential. In fact, spiro-OMeTAD might be expected to be a "pinhole blocker" as is discussed later [13]. These inferences were tested in the fabrication of devices, as reported in Section III-C.…”

Section: B Junction Properties Of Materials Combinations For Use In Nmentioning

confidence: 99%

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Mariotti

Turkestani

Hutter

et al. 2020

IEEE J. Photovoltaics

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We investigated the formation of photovoltaic (PV) devices using direct n-Si/MAPI (methylammonium lead tri-iodide) two-sided heterojunctions for the first time (as a possible alternative to two-terminal tandem devices) in which charge might be generated and collected from both the Si and MAPI. Test structures were used to establish that the n-Si/MAPI junction was photoactive and that spiro-OMeTAD acted as a "pinhole blocking" layer in n-Si/MAPI devices. Two-terminal "substrate" geometry devices comprising Al/n-Si/MAPI/spiro-OMeTAD/Au were fabricated and the effects of changing the thickness of the semitransparent gold electrode and the silicon resistivity were investigated. External quantum efficiency and capacitance-voltage measurements determined that the junction was one-sided in the silicon-and that the majority of the photocurrent was generated in the silicon, with there being a sharp cutoff in photoresponse above the MAPI bandgap. Construction of band diagrams indicated the presence of an upward valence band spike of up to 0.5 eV at the n-Si/MAPI interface that could impede carrier flow. Evidence for hole accumulation at this feature was seen in both Kelvin-probe transients and from unusual features in both current-voltage and capacitance-voltage measurements. The devices achieved a hysteresis-free best power conversion efficiency of 2.08%, V OC 0.46 V, J SC 11.77 mA/cm 2 , and FF 38.4%, demonstrating for the first time that it is possible to create a heterojunction PV device directly between the MAPI and

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Section: B Junction Properties Of Materials Combinations For Use In Nmentioning

confidence: 99%

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Mariotti

Turkestani

Hutter

et al. 2020

IEEE J. Photovoltaics

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“…Thus, an alternative way to further enhance the V oc is to apply the hole transport layer (and/or electron reflecting layer) to improve the carrier collection function . Various inorganic and organic hole transport layers have been employed on CdTe devices to increase the hole extraction, such as Cu doped ZnTe, P3HT, PEDOT:PSS, and Sprio‐OMeTAD . However, depositing these functional layers may need expensive physical vapor deposition facilities.…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13][14] Various inorganic and organic hole transport layers have been employed on CdTe devices to increase the hole extraction, such as Cu doped ZnTe, P3HT, PEDOT:PSS, and Sprio-OMeTAD. [15][16][17][18] However, depositing these functional layers may Angelique Montgomery and Liping Guo contributed equally to this work. need expensive physical vapor deposition facilities.…”

Section: Introductionmentioning

confidence: 99%

Solution‐processed copper (I) thiocyanate (CuSCN) for highly efficient CdSe/CdTe thin‐film solar cells

Montgomery

Guo

Grice

et al. 2019

Progress in Photovoltaics

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Solution‐processed CuSCN serving as hole transport, electron reflecting layer (HTL, ERL) and Cu dopant source for CdSe/CdTe thin‐film solar has demonstrated high power conversion efficiency (PCE) of ~17%. Two types of solvent, diethyl sulfide (DES) and aqueous ammonia (NH4OH), are explored to deposit CuSCN on CdTe, and both can enhance the performance of CdSe/CdTe solar cells. However, NH4OH solvent is less toxicity, leading to a smoother surface than DES solvent, enabling the deposition of ultra‐thin CuSCN layer and avoiding the high cost of DES. Temperature‐dependent current‐voltage (J‐V‐T) and capacitance‐voltage (C‐V‐T) measurements reveal that the use of CuSCN HTL increases hole concentration in CdTe absorber and significantly reduces back‐contact barrier height. High power conversion efficiency is achievable with the optimal thickness of the CuSCN layer. Our results demonstrate solution‐processed CuSCN HTL for enhancing the efficiency and reducing the cost of CdTe thin‐film solar cells.

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“…Mitigation of such pinholes in other absorbers employs treatments filling voids with neutral material, e.g., with the polymer P3HT in CdTe. 51 Identification of an ideal window-layer (e.g., ZnO, SnO 2 : F, TiO 2 , or CdS) and combined optimization alongside the Sb 2 Se 3 deposition should lead to Sb 2 Se 3 -based devices with competitive efficiencies, e.g., see the evolution with different ZnO textures in Fig. 1(d) of Ref.…”

mentioning

confidence: 99%

Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance

et al. 2018

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The candidate photovoltaic absorber antimony selenide Sb2Se3 has been prepared by the commercially attractive close-space sublimation method. Structure, composition, and morphology are studied by x-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Large rhubarb-like grains favorable for photovoltaics naturally develop. The temperature-dependence of the direct band gap is determined by photoreflectance between 20 and 320 K and is well described by the Varshni and Bose–Einstein relations, blue-shifting with decreasing temperature from 1.18 to 1.32 eV. The 300 K band gap matches that seen in high quality single-crystal material, while the 0 K gap is consistent with that found in first-principles calculations, further supporting the array of beneficial photovoltaic properties indicated for this material.

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P3HT as a pinhole blocking back contact for CdTe thin film solar cells

Cited by 30 publications

References 40 publications

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Solution‐processed copper (I) thiocyanate (CuSCN) for highly efficient CdSe/CdTe thin‐film solar cells

Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance

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