P2I-1 Surface Acoustic Wave Ultraviolet Sensor Using Epitaxial AlGaN/(Al,Ga)N Film

Koh, Keishin; Nakai, Kenta; Negisi, T.; Yokota, M; Hohkawa, K.

doi:10.1109/ultsym.2006.446

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…In addition, by changing the molar fraction of Al in AlGaN the cutoff wavelength for UV detection can be tuned from 365 nm to 200 nm. Various SAW devices for UV sensing based on AlGaN/sapphire [5], GaN/sapphire [6], AlN/GaN/sapphire [7] and AlGaN/GaN/sapphire [8] have been proposed. Despite these recent developments in making sensitive SAW delay line oscillators using nitride semiconductors for UV sensing, the physical origin of SAW frequency/phase change under UV is not completely understood.…”

Section: Introductionmentioning

confidence: 99%

Surface acoustic wave interdigital transducer response to Deep UV illumination in AlGaN/sapphire

Chivukula

Čiplys

Shur

et al. 2009

2009 IEEE International Ultrasonics Symposium

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Aluminum-gallium nitride (AlGaN) alloys are promising materials for wavelength-tunable solar-blind surface acoustic wave (SAW) ultraviolet (UV) sensors. We investigate the physical origin of SAW frequency/phase change and study the impact of UV illumination on performance of SAW interdigital transducers (IDT) deposited on AlGaN surface. We correlate these investigations with low frequency measurements of IDT photocapacitance and photoconductance. Our results are important for design and development of efficient SAW devices for UV sensing and high performance filters with tunable frequency response for signal processing applications.

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Section: Introductionmentioning

confidence: 99%

Surface acoustic wave interdigital transducer response to Deep UV illumination in AlGaN/sapphire

Chivukula

Čiplys

Shur

et al. 2009

2009 IEEE International Ultrasonics Symposium

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Frequency hopping due to acousto-electric interaction in ZnO based surface acoustic wave oscillator

Dasgupta

Sreenivas

2011

Journal of Applied Physics

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A 36 MHz surface acoustic wave delay line based oscillator has been used to study the effect of acousto-electric interaction due to photo generated charge carriers in rf sputtered ZnO film under UV illumination (λ = 365 nm, 20–100 μW/cm2). Design aspects for developing a delay line based SAW oscillator are specified. The observed linear downshift in frequency (2.2 to 19.0 kHz) with varying UV intensity (20–100 μW/cm2) is related to the fractional velocity change due to acousto-electric interaction. UV illumination level of 100 μW/cm2 leads to a characteristic frequency hopping behavior arising due to a change in the oscillation criteria, and is attributed to the complex interplay between the increased attenuation and velocity shift.

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Capacitance controlled n-GaN SAW UV sensor

et al. 2008

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P2I-1 Surface Acoustic Wave Ultraviolet Sensor Using Epitaxial AlGaN/(Al,Ga)N Film

Cited by 4 publications

References 13 publications

Surface acoustic wave interdigital transducer response to Deep UV illumination in AlGaN/sapphire

Surface acoustic wave interdigital transducer response to Deep UV illumination in AlGaN/sapphire

Frequency hopping due to acousto-electric interaction in ZnO based surface acoustic wave oscillator

Capacitance controlled n-GaN SAW UV sensor

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