P‐Type Polar Transition of Chemically Doped Multilayer MoS<sub>2</sub> Transistor

Liu, Xiaochi; Qu, Deshun; Ryu, Jungjin; Ahmed, Faisal; Yang, Zhou; Lee, Dae-Yeong; Yoo, Won Jong

doi:10.1002/adma.201505154

Cited by 211 publications

(197 citation statements)

References 42 publications

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“…The drain–source current is controlled by the gate voltage on the dielectric layer. High carrier mobility, high switching ratio and low subthreshold swing means high performance FET, which depends on the metal contacts,247 channel materials (thickness,248, 249 doping,192, 250, 251, 252, 253, 254 heterostructures200, 208), dielectric materials (back‐gate,86, 255 top‐gate,256 liquid gate257), and so forth. 2D GIVMCs based FETs have demonstrated exciting performance.…”

Section: Device Applicationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Device Applicationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…Because 2D‐TMDC materials have atomic‐scale thickness, it is difficult to modulate the p‐ and n‐type characteristics by employing the conventional technique of controlling electron/hole concentrations via ion implantation, unlike in bulk silicon, as ion bombardment can impart serious lattice damage in 2D‐TMDC materials. In this regard, few attempts have been made to tune the doping type in 2D‐TMDC materials by adopting other nonconventional approaches, such as chemical doping using dichloroethane, benzyl viologen (BV), and AuCl 3 ; and plasma‐induced doping . However, the practical implementation of these techniques has been very limited, mainly because of the chemical instability and processing complexity.…”

Section: Introductionmentioning

confidence: 99%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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To realize basic electronic units such as complementary metal‐oxide‐semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p‐ and n‐type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron‐charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)‐grown 2H‐MoTe2 is utilized to tune the doping from p‐ to n‐type. Moreover, a type‐controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n‐type MoTe2 transistor from the p‐channel exhibits a maximum on‐state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD‐grown 2H‐MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide‐based efficient and ultrafast electronic units with high‐density circuit components under a low‐dimensional regime.

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“…The doping or defects as well as strain associated with the presence of the boundaries in two-dimensional materials lead to strong photoluminescence quenching or enhancement [1]. Therefore, photoluminescence properties of two-dimensional materials can be tuned through chemical doping when dopants cover its surface [27]. Pressure produces a shift in the band gap energy of the material and therefore widens its spectrum although it reduces the photoluminescence intensity [28].…”

Section: Photoluminescencementioning

confidence: 99%

Graphene against Other Two-Dimensional Materials: A Comparative Study on the Basis of Photonic Applications

Vargas-Bernal¹

2017

Graphene Materials - Advanced Applications

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Two-dimensional materials represent the basis of technological development to produce applications with high added value for nanoelectronics, photonics, and optoelectronics. In first decades of this century, these materials are impelling this development through materials based on carbon, silicon, germanium, tin, phosphorus, arsenic, antimony, and boron. 2D materials for photonic applications used until now are graphene, silicene, germanene, stanene, phosphorene, arsenene, antimonene, and borophene. In this work, the main strategies to modify optical properties of 2D materials are studied for achieving photodetection, transportation, and emitting of light. Optical properties analyzed here are refractive index, extinction coefficient, relative permittivity, absorption coefficient, chromatic dispersion, group index, and transmittance. The transmittance spectra of various two-dimensional materials are presented here with the aim of classifying them from photonic point-of-view. A performance comparison between graphene and other twodimensional materials is done to help the designer choose the best design material for photonic applications. In next three decades, a lot of scientific research will be realized to completely exploit the use of 2D materials either as single monolayers or as stacked multilayers in several fields of knowledge with a special emphasis in the optoelectronics and photonic industry in benefit of the industry and ultimately to our society.

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P‐Type Polar Transition of Chemically Doped Multilayer MoS₂ Transistor

Cited by 211 publications

References 42 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Graphene against Other Two-Dimensional Materials: A Comparative Study on the Basis of Photonic Applications

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P‐Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Cited by 211 publications

References 42 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Graphene against Other Two-Dimensional Materials: A Comparative Study on the Basis of Photonic Applications

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Product

Resources

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P‐Type Polar Transition of Chemically Doped Multilayer MoS₂ Transistor

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits