p -type metal-base transistor

Abstract

In this work we present data from a novel p-type metal-base transistor with common-base gain α∼1, fabricated at ambient temperature and pressure by electrodepositing sequentially on a p-type Si collector, a Co base and a Cu2O emitter. The high gain and the dependence of potential between emitter and base (VEB) on the potential between collector and base (VCB) when the emitter current (IE) is held constant both suggest that the device functions as a natural permeable base transistor for very thin metal bases.

Electronic to protonic conduction switching in Cu2O nanostructured porous films: the effect of humidity exposure

“…[1][2][3][4] P-type semiconducting cuprous oxide (Cu 2 O) with a direct band gap of approximately 2.17 eV has been intensively investigated because of its potential application in various elds, including photovoltaic devices, light-emitting diodes, catalysis, spintronics, photoelectrochemical water splitting, and gas sensing. [5][6][7][8][9][10] The major advantages of Cu 2 O semiconductors are their nontoxicity and low cost. Electrochemical, 11 solvothermal, 12 hydrothermal, and calcination techniques 13,14 have all been reported to synthesize porous-structured Cu 2 O.…”

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

“…2 During the development of MBTs, a related device, the permeable-base transistor ͑PBT͒ was also developed, which differs from the MBT due to the existence of unintentionally existing pinholes or intentionally introduced grid structure in the base. 5 In the past decade, several organic materials were used to demonstrate several hybrid and all-organic vertical architecture transistors, [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] including hybrid MBTs with the base made of conducting polymer blend instead of a metal. 5 In the past decade, several organic materials were used to demonstrate several hybrid and all-organic vertical architecture transistors, [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] including hybrid MBTs with the base made of conducting polymer blend instead of a metal.…”

Preparation and Characterization of Electrodeposited Co/p-Si Schottky Diodes

“…Metal-semiconductor (MS) structures exhibiting a potential barrier at the interface are the base for the study of different kinds of devices and are known as Schottky diodes (due to the current rectifying behavior). MS interfaces fabricated with magnetic metallic layers, with or without rectifying effect, attract special interest for the development of spintronic devices [1][2][3]. The fabrication of a magnetic metal base transistor (MBT), a device with Schottky barriers at emitter/base and base/collector interfaces, similar to the spin transistor proposed by Monsma et.…”

“…al. [4], was the subject of previous works [2,3]. The base and the emitter of the TBMs were electrodeposited sequentially on the surface of a p-type Si single crystal substrate (collector).…”