p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Wang, Qi; Liu, X.; Kibria, Md Golam; Zhao, Songrui; Nguyen, Hieu Pham Trung; Li, K. H.; Mi, Zetian; Gonzalez, Timothy; Andrews, Mark P.

doi:10.1039/c4nr01608d

Cited by 28 publications

(30 citation statements)

References 53 publications

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“…S2(b), ESI †). 39,[51][52][53][54][55] When T Mg was 440°C, the Mg-related signatures were absent, which was probably due to the different growth modes, i.e., different scattering geometries under this condition. Although we were not able to estimate the Mg concentration for the sample with T Mg = 360°C and 400°C using intensities of LVMs due to the lack of references for the Mg-doped AlGaN study, 39 the Raman results here further affirm the substitutional Mg atoms.…”

Section: Resultsmentioning

confidence: 99%

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

et al. 2018

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Section: Resultsmentioning

confidence: 99%

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

et al. 2018

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“…8 On the other hand, the twinning superlattices in cubic ZB nanowires induce a blue-shift of the photoluminescence because of the staggered band alignment at the twin boundaries. [20][21][22][23] The common p-type dopants are Mg, Cu, Zn, etc. In this context, great efforts have been made to control the crystal structure and tailor the structural defects of the semiconductor nanowires in the past decades.…”

Section: Introductionmentioning

confidence: 99%

Zn-dopant dependent defect evolution in GaN nanowires

et al. 2015

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Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

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“…21 The degradation in the crystal quality of the GaN:Mg nanowires is also confirmed from the increment of full-width-at-half-maximum (FWHM) of the E 2 Raman line. 24 At very high Mg flux (T Mg ¼ 280 C), the DAP emission ( Fig. 1(b)) red-shifts with progressive disappearance of the band-edge emission.…”

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Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

Kibria

Chowdhury

Zhao

et al. 2015

Applied Physics Letters

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We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr2O3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts.

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p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Cited by 28 publications

References 53 publications

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Zn-dopant dependent defect evolution in GaN nanowires

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

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