p<sup>+</sup>-InAsSbP/ n -InAs photodiodes for IR optoelectronic sensors

Tetyorkin, V. V.; Sukach, A. V.; Stariy, S.V.; Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Stus, N. M.

doi:10.1117/12.622181

Cited by 3 publications

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References 12 publications

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“…The broadband spectrum shown in Fig. 8 is explained by contribution of both sides of the heterojunction PD, including heavily doped wide-gap InAsSbP constituent, to the photoresponse [27]. It should be pointed out that typical value of the specific detectivity in the investigated heterojunction PD is equal to 2×10 9 cm×Hz 1/2 ×W -1 .…”

Section: Discussionmentioning

confidence: 93%

Performance of InAs-based infrared photodiodes

Tetyorkin

Sukach

Stary

et al. 2007

Optical Sensing Technology and Applications

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The performance of infrared InAs homojunction and heterojunction photodiodes (PD) and possibilities of its improvement are analyzed both theoretically and experimentally. The figures of merit such as the resistance-area product R 0 A, the carrier lifetime and the quantum efficiency are studied. The excess carrier lifetime in InAs are calculated for radiative and Auger recombination mechanisms using three-and four-band Kane model. Theoretical limit of threshold parameters in InAs-based photodiodes is calculated for intrinsic (radiative and Auger) recombination processes. The diffused PD were prepared by short-term cadmium diffusion into substrates with n-type conductivity. In the investigated PD the total dark current is determined by the diffusion carrier transport mechanism at room temperature. Experimentally proved that heterojunction PD p + -InAsSbP/n-InAs can be more effective as sensitive element in gas sensors operated at room temperature in comparison with commercially available PD.Their threshold parameters (current sensitivity and detectivity) have approximately the same values as in commercially available photodiodes, but they have higher values of the resistance-area product.

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Section: Discussionmentioning

confidence: 93%

Performance of InAs-based infrared photodiodes

Tetyorkin

Sukach

Stary

et al. 2007

Optical Sensing Technology and Applications

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P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)

et al. 2014

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InAs Infrared Photodiodes

Tetyorkin¹,

Sukach²,

Ткачук³

2011

Advances in Photodiodes

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Advances in Photodiodes 428At the same time these PDs are characterized by rather low values of the differential resistance -area product R 0 A at room temperature. This seems to be the main reason that InAs infrared photodetectors operate in sub-BLIP regime (Rogalsky, 1995). Further improvement in their performance is possible with a decrease in dark current and supression of Auger recombination. Preparation of photodiodes and experimental techniquesHomojunction PDs were prepared by short-term (20-30 min) diffusion of Cd into n-InAs substrates at T=875 K. The substrates of n-type conductivity were cut from single-crystal ingots grown in joint-stock company "Pure metals plant" (Svetlovodsk, Ukraine). The damaged surface layers were removed by using dynamic chemical-mechanical polishing in 2% Br 2 -CH 3 OH solution. Their structural quality was controlled by X-ray diffraction method. In the chemically polished substrates the rocking curves half-width was 25-27 '' . Electrical parameters were controlled by van der Pauw technique at 295 K. The carrier concentration and mobility were found to be n=(2÷3)×10 16 cm -3 and µ n =(2÷2.5)×10 4 cm 2 /V×s, respectively. The density of dislocations was in the range (2÷4)×10 4 cm 2 . The substrates with the diffused p-type layer had mirror-like surfaces free of structural damages such as inclusions of impurity atoms. They were characterized by the rocking curve halfwidth of 32-35 '' . Typical profiles of Cd atoms in a substrate are shown in Fig.1. As seen, at low values of depth x they can be approximated by two exponential dependences (shown by solid lines in Fig. 1). Similar profiles of impurity atoms were previously observed in GaAs (Grigor'ev & Kudykina, 1997) and explained by generation of non-equilibrium vacancies at the substrate's surface. In such a case, an impyrity profile is determined by distribution of vacancies under the surface. The junction depth was determined from the probe thermo-emf measurements during careful chemical etching of diffused layers. Mesa structures were prepared on (111)A side of substrates by chemical etching in 2% Br 2 -HBr solution. In order to eleiminate the surface leakage current mesas were passivated by etching in HNO 3 -based solution followed by deposition of anode oxide doped with fluorine with thickness of 0.3 m. After passivation they were covered by thin layer of ZnTe thermally deposited in a vacuum chamber at temperature 150 o C. The heterojunction p + -InAsSbP/n-InAs PDs were prepared by LPE technique in IOFFE Physico-Technical Institute, St.-Petersbur Russia (Zotova, 1991;Matveev, 1997;Matveev, 2002). For this purpose, lattice matched InAsSbP epitaxial layers of approximately 3 μm thickness were grown on (111)B surfaces of InAs substrates. The quaternary InAsSbP compound had energy gap of 0.43 eV at T = 297 K. The epilayers were doped to about 10 18 cm -3 by addition of Zn to the melt. The substrates were n-type single crystals with electron concentration n=(2÷3)×10 16 cm -3 . In homojunction and heterojunction PDs mesa struc...

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p⁺-InAsSbP/ n -InAs photodiodes for IR optoelectronic sensors

Cited by 3 publications

References 12 publications

Performance of InAs-based infrared photodiodes

Performance of InAs-based infrared photodiodes

P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)

InAs Infrared Photodiodes

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p+-InAsSbP/ n -InAs photodiodes for IR optoelectronic sensors

Cited by 3 publications

References 12 publications

Performance of InAs-based infrared photodiodes

Performance of InAs-based infrared photodiodes

P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)

InAs Infrared Photodiodes

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p⁺-InAsSbP/ n -InAs photodiodes for IR optoelectronic sensors