2020
DOI: 10.1039/d0nj04572a
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P5W30/g-C3N4heterojunction thin film with improved photoelectrochemical performance for solar water splitting

Abstract: The new photocatalysts were synthesized with inorganic clusters of polyoxometalats (POMs) and graphitic carbon nitride (g-C3N4) under hydrothermal conditions. In this research, for the first time, the preyssler-type of polyoxometalate...

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Cited by 22 publications
(7 citation statements)
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“…Then, according to the empirical formula: , where e, e 0 , e 0 and V are the dielectric constant of g-C 3 N 4 , vacuum dielectric constant, the electron charge and the applied potential, respectively. 63 The charge carrier densities of CN, CNT-1.5/CN and HRP-10/CNT-1.5/CN are 2.71 Â 10 19 (cm À3 ), 3.92 Â 10 19 (cm À3 ) and 4.10 Â 10 19 (cm À3 ). HRP-10/CNT-1.5/CN has the highest carrier density, which indicates that it has a higher electron transfer efficiency.…”
Section: Resultsmentioning
confidence: 97%
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“…Then, according to the empirical formula: , where e, e 0 , e 0 and V are the dielectric constant of g-C 3 N 4 , vacuum dielectric constant, the electron charge and the applied potential, respectively. 63 The charge carrier densities of CN, CNT-1.5/CN and HRP-10/CNT-1.5/CN are 2.71 Â 10 19 (cm À3 ), 3.92 Â 10 19 (cm À3 ) and 4.10 Â 10 19 (cm À3 ). HRP-10/CNT-1.5/CN has the highest carrier density, which indicates that it has a higher electron transfer efficiency.…”
Section: Resultsmentioning
confidence: 97%
“…4(d)-(f), the Mott-Schottky curves of CN, CNT-1.5/CN and HRP-10/CNT-1.5/ CN all have positive slopes, indicating that they are all N-type semiconductors. The charge carrier density of the sample is calculated by the equation N d = (2/ee 0 e 0 )[d(C À2 /dV)] À1, where e, e 0 , e 0 and V are the dielectric constant of g-C 3 N 4 , vacuum dielectric constant, the electron charge and the applied potential, respectively 63. The charge carrier densities of CN, CNT-1.5/CN and HRP-10/CNT-1.5/CN are 2.71 Â 10 19 (cm À3 ), 3.92 Â 10 19 (cm À3 ) and 4.10 Â 10 19 (cm À3 ).…”
mentioning
confidence: 99%
“…To examine this aspect, g-C 3 N 4 was combined with an anionic Preysslertype POM [NaP 5 W 30 O 110 ] 14− and the so formed composite was then deposited on an optically transparent fluorine-doped SnO 2 (FTO) electrode. 303 The presence of the POM was obviously beneficial for the photoelectrocatalytic OER activity of the photoanode. Compared with pristine g-C 3 N 4 , higher photocurrent densities were measured at 1.23 V vs RHE in sulfate solution at pH = 6.4 (44 vs 18 μA cm −2 ) and the photoconversion efficiency was 3.45 times greater.…”
Section: Poms-functionalized Semiconducting Photoelectrodesmentioning
confidence: 99%
“…Therefore, the combination of POMs with g-C 3 N 4 could reduce some of the intrinsic drawbacks of g-C 3 N 4 . To examine this aspect, g-C 3 N 4 was combined with an anionic Preyssler-type POM [NaP 5 W 30 O 110 ] 14– and the so formed composite was then deposited on an optically transparent fluorine-doped SnO 2 (FTO) electrode . The presence of the POM was obviously beneficial for the photoelectrocatalytic OER activity of the photoanode.…”
Section: Poms-functionalized Semiconducting Photoelectrodesmentioning
confidence: 99%
“…As aforementioned, similar to the conventional inorganic semiconductor photocatalysts, the pristine g−CN films usually suffer from several intrinsic shortcomings, such as insufficient visible-light absorption, the rapid recombination rate of charge carriers, and low electrical conductivity [105,146,147]. Therefore, various strategies are employed to restrain the recombination of charge carriers in g−CN films to enhance the PEC performance.…”
Section: Composite Films Of G−cn As Highly Valid Photoelectrodes For ...mentioning
confidence: 99%