p-n heterojunctions

Perlman, S.S.; Feucht, D. L.

doi:10.1016/0038-1101(64)90070-x

Cited by 97 publications

(22 citation statements)

References 7 publications

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“…On the other hand, as pointed out above, the models of Anderson ( 1 962) and Perlman and Feucht (1964) involve emission as well as diffusion mechanisms. Hcnce the final expressions for the current density in anisotype heterojunctions, in the present model, are new in spite of the fact that no new mechanism such as, for example, recombination a t the interface has been introduced.…”

Section: In Anderson's Model For N-p Heterojunctionsmentioning

confidence: 90%

Diffusion theory of current transport in anisotype heterojunctions

Kumar

1969

International Journal of Electronics

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Section: In Anderson's Model For N-p Heterojunctionsmentioning

confidence: 90%

Diffusion theory of current transport in anisotype heterojunctions

Kumar

1969

International Journal of Electronics

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“…This concept of the splitting of the electron QFL at an abrupt heterojunction was proposed by Perlman and Feucht in 1964. 3 Lundstrom in 1984, suggested that the degree of splitting is given by the difference between the thermionic emission current across a heterojunction and the driftdiffusion current away from the junction. 4 More recently, many authors have used this concept in analytical models for heterojunction bipolar transistors and heterojunction bipolar photransistors.…”

Section: ͑2͒mentioning

confidence: 99%

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Ginige

Cherkaoui

Kwan

et al. 2004

Journal of Applied Physics

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This article analyzes and explains the observed temperature dependence of the forward dark current of lattice matched In0.53Ga0.47As on InP diodes as a function of voltage. The experimental results show, at high temperatures, the characteristic current-voltage (I–V) curve corresponding to leakage, recombination, and diffusion currents, but at low temperatures an additional region is seen at high fields. We show that the onset of this region commences with high injection into the lower-doped base region. The high injection is shown by using simulation software to substantially alter the minority carrier concentration profile in the base, emitter and consequently the quasi-Fermi levels (QFL) at the base/window and the window/cap heterojunctions. We show that this QFL splitting and the associated electron “pile-up” (accumulation) at the window/emitter heterojunction leads to the observed pseudo-n=2 region of the current-voltage curve. We confirm this phenomenon by investigating the I–V–T characteristics of diodes with an InGaAsP quaternary layer (Eg=1 eV) inserted between the InP window (Eg=1.35 eV) and the InGaAs emitter (Eg=0.72 eV) where it serves to reduce the barrier to injected electrons, thereby reducing the “pile-up.” We show, in this case that the high injection occurs at a higher voltage and lower temperature than for the ternary device, thereby confirming the role of the “accumulation” in the change of the I–V characteristics from n=1 to pseudo-n=2 in the ternary latticed matched device. This is an important phenomenon for consideration in thermophotovoltaic applications. We, also show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.

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“…1. The pn product at the edge of emitter-base space-charge layer in the base is [14] The quasi-Fermi level splitting at the emitter-base heterojunction is given by [15] exp (qvBE/kT) + { l + A 6E,,, = qVBE -kT In (9) where A = l/[S,(l + l/S,)], SE and S, are the effective interface recombination velocities at the emitter-base and collector-base junctions, respectively. The pn product at the edge of the collector-base space-charge layer in the base is tVBC itEFnC…”

Section: Modeling the Integral Gummel Equationmentioning

confidence: 99%

An Integral Gummel Relation for Single and Double Heterojunction Graded-Base HBTs

Yuan

1995

Phys. Stat. Sol. (a)

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An integral Gummel charge‐control relation for both linearly graded and non‐graded base and for single or double heterojunction bipolar transistors is derived. In addition to modeling the collector current density for different heterojunction systems, the analytical model is useful for analyzing the collector offset voltage of the heterojunction bipolar transistor with or without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.

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p-n heterojunctions

Cited by 97 publications

References 7 publications

Diffusion theory of current transport in anisotype heterojunctions

Diffusion theory of current transport in anisotype heterojunctions

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

An Integral Gummel Relation for Single and Double Heterojunction Graded-Base HBTs

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