P-I-N Photodiodes for Optical Control of Microwave Circuits

Малышев, С. А.; Chizh, A.

doi:10.1109/jstqe.2004.831949

Cited by 17 publications

(7 citation statements)

References 19 publications

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“…Also, the model is completely applicable for the linear regimes with the constant carriers' velocities. The nonlinearity effect observed here happens only due to the influence of photodiode voltage on carriers' velocities [9][10][11][12]. The effect becomes relevant when the photodiode is not highly saturated, so the carriers' velocities are not simple saturation velocities, and when the energy of light pulses varies (so the average carriers' velocities alter from pulse to pulse).…”

Section: Introductionmentioning

confidence: 82%

“…1. Several assumptions are made: 1) the width of the P region is much smaller than the width of the i region so there is no relevant generation of carriers in P region and the main current is drift current in i region; 2) the diffusion current in the N region is taken into account and in P is neglected according to assumption 1; 3) there is no space charge effect-we consider the situation when the input signal is high but not that order of magnitude to create space charge effect; 4) the dark current is neglected because it is a few degrees of magnitude lower than the photocurrent; and 5) nonlinearity exists only as the consequence of the voltage drop on the load resistance, [10]. These assumptions are used to simplify model and they are valid if we deal with low, medium and high, but not overmuch high, incident light signal as in the case analyzed in [11,12].…”

Section: Equivalent Modelmentioning

confidence: 99%

See 1 more Smart Citation

An Unique SPICE Model of Photodiode with Slowly Changeable Carriers’ Velocities

Matavulj

Lazović

Radunovic

2010

J Infrared Milli Terahz Waves

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This paper deals with a relatively new SPICE model of a P-i-N photodiode. The model includes a change of velocities of electrons and holes, due to the voltage drop on the edges of the photodiode, which depends on the time form of input excitation. We have derived the model of the P-i-N photodiode for digital input excitation i.e. for Heaviside's square wave time excitation. The model is incorporated in SPICE program and simulated with it. The model and the limitations of the model itself are observed. The output results are compared with the similar ones. It is suggested when it is practical to use the model, and determined the photodiode working domain regime when the model gives accurate results.

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Section: Introductionmentioning

confidence: 82%

Section: Equivalent Modelmentioning

confidence: 99%

An Unique SPICE Model of Photodiode with Slowly Changeable Carriers’ Velocities

Matavulj

Lazović

Radunovic

2010

J Infrared Milli Terahz Waves

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“…13 There are many different types of optoelectronic mixers based on positive-intrinsic-negative (PIN) PDs. [14][15][16][17][18] In the optoelectronic mixer, the frequency mixing occurs due to the PIN-PD responsivity dependence on a bias voltage. In other words, the intensity-modulated optical signal is detected by a PD with a certain modulated sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Quadrature amplitude modulation frequency up- and down-conversions using a positive-intrinsic-negative photodiode sampling mixer

Termos

Mansour

2022

Opt. Eng.

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. Simulation and experimental performance analysis of a positive-intrinsic-negative photodiode (PIN-PD) sampling mixer used as frequency up and down-converters are presented. Besides, a frequency mixing with a PIN-PD can operate in a frequency range up to 47.3 GHz for up-conversion and 38.5 GHz for down-conversion. The design and operating regime peculiarities of a PIN-PD as an up and down-converter in a radio over fiber (RoF) system are also discussed. The conversion gain of a PIN-PD sampling mixer is simulated and measured. We showed that the gain may decrease from 27 dB at a mixing frequency of 8.3 GHz to 3 dB at the one with 47.3 GHz in an up-conversion mode and from 26.5 dB at 31.7 GHz to 7 dB at 38.5 GHz in a down-conversion mode, when the PIN-PD bias voltage was 0 V. The conversion gain degrades with the decrease of the bias voltage from 0 to −5 V. Error vector magnitudes (EVMs) of the quadratic amplitude modulation (M-QAM) up and down-converted signals are investigated. Quadrature phase shift keying (QPSK) data at bit rates between 312.5 Mbit / s and 5 Gbit / s are frequency-converted. The EVM is used a performance index to assess the mixing system. Exploitable EVMs in the range of 15% up to 34.9% are reached for up-conversion of the mixing frequency. For down-conversion, the EVM varies from 20% to 34.9% at 5 Gbit / s over the whole frequency range. The EVM of mixed signals is improved with 16-QAM and 64-QAM modulations.

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“…Висмут, являясь полуметаллом, способствует уменьшению энергии запрещенной зоны легируемых им твердых растворов и смещает диапазон их фоточувствительности в инфракрасную область спектра [1], повышает морфологическую стабильность фронта кристаллизации и уменьшает отклонение твердых растворов от стехиометрии [2], и подобно кремнию и германию, в состоянии расплава имеет наибольшую плотность. Малая эффективная масса и аномально высокое значение средней длины свободного пробега электронов делают висмут чрезвычайно важным для изучения квантоворазмерных эффектов [3] и изготовления на их основе высокоскоростных, высокочувствительных оптоэлектронных приборов [4,5].…”

Section: Introductionunclassified

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

Алфимова¹,

Лунин²,

Лунина³

et al. 2020

Физика Твердого Тела

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In this paper the features of phase transformations in elastically stressed Al–Ga–In–Sb–Bi heterosystems and its subsystems In–Sb–Bi and Al–In–Bi are discussed. Isotherms for the aforesaid heterosystems and its subsystems are researched at temperatures from 653 to 923 K. The critical temperatures and critical point coordinates of spinodal decomposition of AlGaInSbBi solid solution are determined with regard to the coherent deformation energy. The elastic stresses effect on the thermodynamic behavior of the AlGaInSbBi–InSb heterosystem is investigated.

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P-I-N Photodiodes for Optical Control of Microwave Circuits

Cited by 17 publications

References 19 publications

An Unique SPICE Model of Photodiode with Slowly Changeable Carriers’ Velocities

An Unique SPICE Model of Photodiode with Slowly Changeable Carriers’ Velocities

Quadrature amplitude modulation frequency up- and down-conversions using a positive-intrinsic-negative photodiode sampling mixer

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

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