p-i-n Photodiodes for Frequency Mixing in Radio-Over-Fiber Systems

Малышев, С. А.; Chizh, A.

doi:10.1109/jlt.2007.906811

Cited by 26 publications

(13 citation statements)

References 17 publications

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“…Висмут, являясь полуметаллом, способствует уменьшению энергии запрещенной зоны легируемых им твердых растворов и смещает диапазон их фоточувствительности в инфракрасную область спектра [1], повышает морфологическую стабильность фронта кристаллизации и уменьшает отклонение твердых растворов от стехиометрии [2], и подобно кремнию и германию, в состоянии расплава имеет наибольшую плотность. Малая эффективная масса и аномально высокое значение средней длины свободного пробега электронов делают висмут чрезвычайно важным для изучения квантоворазмерных эффектов [3] и изготовления на их основе высокоскоростных, высокочувствительных оптоэлектронных приборов [4,5].…”

Section: Introductionunclassified

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

Алфимова¹,

Лунин²,

Лунина³

et al. 2020

Физика Твердого Тела

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In this paper the features of phase transformations in elastically stressed Al–Ga–In–Sb–Bi heterosystems and its subsystems In–Sb–Bi and Al–In–Bi are discussed. Isotherms for the aforesaid heterosystems and its subsystems are researched at temperatures from 653 to 923 K. The critical temperatures and critical point coordinates of spinodal decomposition of AlGaInSbBi solid solution are determined with regard to the coherent deformation energy. The elastic stresses effect on the thermodynamic behavior of the AlGaInSbBi–InSb heterosystem is investigated.

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Section: Introductionunclassified

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

Алфимова¹,

Лунин²,

Лунина³

et al. 2020

Физика Твердого Тела

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“…PIN photodetector operating at OEM in fast mode. However it has large thermal which associated with low resistance load at low input power [8]. Unitravelling Photodiode attract researchers as an OEM in [11][12].…”

Section: Introductionmentioning

confidence: 99%

Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer

Shaharuddin

Idrus

Isaak

2012

2012 IEEE 3rd International Conference on Photonics

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Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1550nm for an upconversion frequency of 30GHz. This transistor was simulated by using the Apsys Crosslight software. Its characteristics was further investigated to develop the appropriate structure device for OEM application. The data such as frequency up conversion, gain and bandwidth of the HBT OEM will be presented. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.

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“…Some other techniques were employing high electron mobility transistor (HEMT) [3,4], heterojunction phototransistor HPT [5][6][7], heterojunction bipolar transistor (HBT) [8][9][10][11], avalanche photodiodes (APDs) [12] and pin photodiodes (PDs) [13,14]. Another techniques that were claimed to have much lower up-conversion loss under high output photocurrent is uni-travelling carrier photodiodes (UTCPDs) based OEM [15] and recently near-ballistic UTC-PD (NBUTC-PD) [16] has been reported having up-conversion loss of 4.3 dB.…”

Section: Introductionmentioning

confidence: 99%

Performance characterization of an optoelectronic mixer (OEM) model based on nonlinear InP/InGaAs heterojunction bipolar transistor

Mohamed

Idrus

Mohammad

et al. 2009

TENCON 2009 - 2009 IEEE Region 10 Conference

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We model an optical front-end receiver with an intermediate frequency (IF) signal transmission utilizing photonic up-conversion technique through harmonic balance simulation analysis. A mixing model is carried out taking advantages of the nonlinearities of the InP/InGaAs HBT to achieve up-conversion of a modulated optical signal. The intensity of the optical signal is modulated by an IF signal ranging from 0.1 GHz to 0.4 GHz and the local oscillation frequency injected into the base terminal is 30 GHz with an input power of -6 dBm. The nonlinear, harmonic balance technique is employed to simulate the mixing performance of the InP/InGaAs HBT OEM. 30.4 GHz up-converted frequency at collectoremitter voltage, V CE = 1.6 V was achieved at the output port based on simulation study.

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p-i-n Photodiodes for Frequency Mixing in Radio-Over-Fiber Systems

Cited by 26 publications

References 17 publications

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

Особенности фазовых переходов в висмутсодержащих упругонапряженных гетеросистемах AlGaInSbBi-InSb

Model characterization of heterojunction bipolar transistor InP/InGaAs optoelectronic mixer

Performance characterization of an optoelectronic mixer (OEM) model based on nonlinear InP/InGaAs heterojunction bipolar transistor

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