p-doping mechanism in HTCVD silicon carbide

Fiorucci, A.; Moscatelli, Davide; Masi, Maurizio

doi:10.1016/j.jcrysgro.2006.12.066

Cited by 6 publications

(5 citation statements)

References 6 publications

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“…And residual C produced by n-type dopant elements substitute C element position whose atomic dimension is similar to C, is thought to enhance electrical conductivity. 17), 18) In other side, the electrical conductivity of lots of C-containing leaf-like structure sample deposited at 1500°C was lower than that of samples deposited below 1500°C, which may be due to the open pores observed on SEM. The electrical conductivity of nitrogen doped samples increased up to 700°C and that of hydrogen doped samples increased up to 900°C as the measurement temperature increased.…”

Section: Jcs-japanmentioning

confidence: 96%

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

Kim

Choi

et al. 2009

J. Ceram. Soc. Japan

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Chemical vapor deposited (CVD) silicon carbide (SiC) provides many advantages over other materials due to its high thermal, chemical and mechanical stability at high temperature. For these reasons, CVD SiC has replaced Si in components for semiconductor process. For application of CVD SiC to semiconductor fabrication equipment, thermoelectric properties controls are important. Therefore, we have studied the effects of different diluent gases, deposition temperatures and microstructures of deposited SiC on change of thermoelectric properties. The electrical conductivity of SiC which used N2 diluent gas was larger than SiC deposited with H2 diluent gas. Electrical resistivity varied by an order of 10 2 for different diluent gases at the same deposition temperature, and Seebeck coefficient also depended on the gas used. Additionally, SiC deposited with H2 showed n-type semiconductor behavior while that deposited with N2 showed p-type characteristics.

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Section: Jcs-japanmentioning

confidence: 96%

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

Kim

Choi

et al. 2009

J. Ceram. Soc. Japan

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“…There have been several experimental dopant incorporation reports, studying the effect different process parameters have on both the aluminum [9,[11][12][13][14][15][16] and boron [9,[11][12][13] incorporation. Aluminum doping has also been studied theoretically [17,18]. However, in all of these investigations the standard precursor mixture with silane and light hydrocarbons has been used.…”

Section: Introductionmentioning

confidence: 99%

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Pedersen

Beyer

Henry

et al. 2009

Journal of Crystal Growth

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a b s t r a c tA systematic p-type doping study has been performed on 4H-and 6H-silicon carbide (SiC) epilayers grown at high growth rate using chloride-based chemical vapor deposition. The effect of temperature, pressure, growth rate, C/Si-, Cl/Si-ratios and dopant flow on the incorporation of the acceptor atoms aluminum and boron has been studied. The C/Si-ratio on the aluminum incorporation has similar behavior to what has been reported for the standard non-chlorinated low growth rate process, while no clear effect of C/Si-ratio was observed for the boron incorporation. A higher Cl/Si-ratio seems to lead to lower the aluminum and boron incorporation either due to more effective silicon supply at high Cl/Siratio or due to removal of dopant atoms from the surface by chlorine. The doping concentration is stable to the variations in silicon molar fraction, growth pressure and growth temperature for the aluminumdoped layers. Also p-type doping with gallium was tested.

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“…Kinetics of the TMAl gas-phase decomposition is studied in Ref. [8] using quantum chemistry investigations. Modeling analysis of SiC CVD is presented in Refs.…”

Section: Introductionmentioning

confidence: 99%

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

Segal

Karpov

Lobanova

et al. 2015

MSF

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Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.

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p-doping mechanism in HTCVD silicon carbide

Cited by 6 publications

References 6 publications

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

A study on the thermoelectric properties of chemical vapor deposited SiC films with temperature and diluent gases variation

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

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