p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks

Abstract

This paper demonstrates the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output. Channel length scaling analysis of these TFTs indicates that the resistance at the source/drain contacts is a small fraction of the device resistance, in the linear regime. When measured with the channel exposed to air or coated by poly(methyl methacrylate) (PMMA), these transistors operate in the unipolar p mode. By spin-coating the polymer polyethylenimine (PEI) on the channel region, these transistors can be switched to operate in the unipolar n mode. Patterning the exposure of a single channel to PMMA and PEI yields p−n diodes. These results indicate that SWNT-TFTs can provide the building blocks of complex complementary circuits for a range of applications in macroelectronics, sensors, and other systems.

Voltage-Induced Dependence of Raman-Active Modes in Single-Wall Carbon Nanotube Thin Films

“…Fig.2a-b show the Raman peaks recorded immediately after releasing each external field used for the measurements shown in While the Raman effects in our experiments are reversible, the conductance does not recover at all after the external field release (Fig.2d). Similar decrease in conductance was found to strongly improve the on/off ratio of thin film transistors and claimed to be due to burning of the metallic SWNTs [4][5][6][7]. In our study, the reversibility in decrease of the peak intensities rules out the burning of large amount of SWNTs.…”

Semiconducting single-walled carbon nanotubes synthesized by S-doping

“…Several separation approaches for the enrichment of one certain electronic type of SWNTs have been developed, such as electrical breakdown [6][7][8][9], ultracentrifugation [10], selective plasma etching [5], electrophoresis [12] and selective chemical functionalization [6]. But the problem is that the posttreatments processes are tedious beyond controlled and often have the disadvantage of damaging or contaminating SWNTs samples [7,8].…”

“…But the problem is that the posttreatments processes are tedious beyond controlled and often have the disadvantage of damaging or contaminating SWNTs samples [7,8]. Recently, preferential growth of Semi-SWNTs by chemical vapor deposition (CVD) methods by boron/nitrogen co-doping was reported to produce high percentage of Semi-SWNTs or a specific chirality distribution SWNTs [10][11][12][13].…”

Ion irradiation effects on conduction in single-wall carbon nanotube networks

“…In this paper, we report the first measurements (to our knowledge) of the effect of irradiation by ions on conduction in thin transparent SWNT networks, finding that resistance always increases on ion irradiation. In contrast to these results, however, we show that ion irradiation initially decreases the resistance of our thick SWNT networks.Many applications proposed for carbon nanotubes [3][4][5][6] are likely to be sensitive to irradiation effects, which u Fax: +49-711-689-1010, E-mail: v.skakalova@fkf.mpg.de would be particularly significant, for example, for devices used in space or other high-radiation environments. Controlled irradiation also has many applications related to carbon nanotubes.…”