P‐88: Study on the correlation of Flicker Shift and PI in FFS Mode Display

Abstract

We study the flicker shift performance of PI materials with different impedances. The Vcom shift of high‐ and low‐resistance PI under the flicker picture and the white picture are tested, and the influence of light and electricity on PI was analyzed. The high resistance PI is less sensitive to light and electricity than the low resistance PI, the degree of Vcom shift is small, and the flicker shift is better than that of the low‐ resistance PI. In addition, the flicker shift of the low resistance PI can be optimized by lowering the panel voltage or the BLU brightness.