Abstract:GaN‐based light‐emitting diode (LED) arrays are a promising technology in a wide range of applications. Research on size dependence performance is important in GaN‐based LED. In this paper, we study the electrical properties of 100µm, 150µm, and 200µm devices. The ideal factor is calculated by measuring the current density‐voltage characteristics to study the carrier transport mechanism. It is found that the forward low bias voltage part is mainly composed of recombination current and diffusion current. The cu… Show more
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