2020
DOI: 10.1002/sdtp.14190
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P‐60: Single‐Step Plasma‐Enhanced Chemical Vapor Deposition of Graphene on Cu Ink and Sputtered Cu Thin Films

Abstract: Ink materials for Inkjet Printing generally suffer from low conductivity, whereas the thickness of Cu interconnects requires further reduction for better flexibility. Here we demonstrate successful growth of graphene on both Cu Ink and sputtered Cu by plasma-enhanced chemical vapor deposition as a promising solution to address the aforementioned issues.

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Cited by 2 publications
(1 citation statement)
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“…Recently, Kim et al have further lowered the required temperatures for PECVD growth of graphene by forced convection to increase the reaction probability of excited species or radicals on the substrate surface before their recombination. To date, the reported growth temperatures for various PECVD graphene synthesis methods are found to range from 160 to 700 °C on various substrates. , …”
Section: Introductionmentioning
confidence: 99%
“…Recently, Kim et al have further lowered the required temperatures for PECVD growth of graphene by forced convection to increase the reaction probability of excited species or radicals on the substrate surface before their recombination. To date, the reported growth temperatures for various PECVD graphene synthesis methods are found to range from 160 to 700 °C on various substrates. , …”
Section: Introductionmentioning
confidence: 99%