Abstract:Nonstoichiometry nickel oxide (NiOx) hole injection layer (HIL) plays an important role in realizing highly efficient and stable perovskite quantum dot light‐emitting diodes (QLEDs). Here, we report the use of solution processed rGO‐doped NiOx thin films as the hole injection layer (HIL) in the perovskite CsPbBr3 QLEDs, with an emphasis on the significantly improved device efficiency. The device (Figure. 1a) consists of multiple layers arranged in the following order: FTO/rGO: NiOx/TFB/CsPbBr3/TPBi/LiF/Al. As … Show more
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