P-211L:<i>Late-News Poster</i>: Exploring the Pixel Density Limitations of SBS AMOLED for VR Application

Chen, Yu-Hung; Hsin, Meng-Hung; Chen, Yi-Chi; Su, Yi; Chen, Wentai; Chen, Teng-Ke; Chen, Tsu‐Wei; Yang, Shun-Ping; Lee, Chien-Ya; Lin, Hong Shen; Chen, Pengyu; Chen, Kuo-Kuang; Lu, Hongbo; Lin, Yu‐Hsin

doi:10.1002/sdtp.11074

Cited by 3 publications

(3 citation statements)

References 6 publications

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“…Especially on-demand printing techniques allow for material efficiencies of more than 90% by patterning different materials for a full-color RGB display [1]. High-resolution displays are required for new types of applications such as head-mounted panels or microdisplays for medical devices [2]. Using inkjet printing and wettability control [3], up to 240 ppi in a 40-inch display have been achieved using 25 µm wide pixels with 10 µm bank structures [1].…”

Section: Introductionmentioning

confidence: 99%

82‐5: Late-News Paper: High‐Resolution Printing for Future Processing of RGB OLED Displays

Gensler

Boeffel

Kröpke

et al. 2018

Symp Digest of Tech Papers

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Section: Introductionmentioning

confidence: 99%

82‐5: Late-News Paper: High‐Resolution Printing for Future Processing of RGB OLED Displays

Gensler

Boeffel

Kröpke

et al. 2018

Symp Digest of Tech Papers

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“…[9][10][11] OLED display resolutions have increased steadily over the years, and high-resolution displays with subpixel sizes smaller than 10 µm, such as augmented reality and virtual reality wearable head-mounted displays, have been developed, as have 4Kcompatible televisions. [12][13][14][15][16][17] However, the growth of a nonemission area, also known as a dark frame (D=F), has been observed to occur at the edges of pixels over long storage times, and this D=F induces the serious problem of pixel shrinkage in high-resolution displays. Numerous previous studies have dealt with the mechanisms of growth due to storage with or without continuous driving of OLED displays.…”

Section: Introductionmentioning

confidence: 99%

Experimental analysis of dark frame growth mechanism in organic light-emitting diodes

Minagawa

Tanabe

Kondo

et al. 2018

Jpn. J. Appl. Phys.

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Organic light-emitting diodes (OLEDs) were fabricated with heterojunction interfaces and layers that were prepared by cold isostatic pressing (CIP), and the growth characteristics of their non-emission areas, or dark frames (D/Fs), were investigated during storage. We fabricated an OLED with an indium-tin-oxide (ITO)/N,N $-di(1-naphthyl)-N,N $-diphenyl-(1,1$-biphenyl)-4,4$-diamine (α-NPD)/tris(8-hydroxylquinoline)aluminum (Alq 3 )/ LiF/Al structure without CIP treatment (Device I), as well as OLEDs that were pressed after the deposition of α-NPD (Device II), Alq 3 (Device III), and LiF/Al (Device IV) layers. Although Devices I, II, and III showed typical D/F growth characteristics, the D/F growth rate in Device IV was markedly mitigated, indicating that the Alq 3 /LiF/Al interfaces dominated the D/F growth. Moreover, we found that the electron injection characteristic was poorer in the electron-only device stored after the LiF layer deposition than in that stored before the LiF deposition. Therefore, the decreased electron injection due to storage at the interfaces was attributed to the D/F growth.

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“…Since standard AR and VR devices are either glass-or head-mounted, their screens are close to the eyes, and thus, high-resolution display panels are required [7][8][9] . However, the complex color-patterning process in OLEDs limits opportunities for OLED display resolution enhancement 10 .…”

mentioning

confidence: 99%

Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays

et al. 2020

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Thin-film transistor (TFT)-driven full-color organic light-emitting diodes (OLEDs) with vertically stacked structures are developed herein using photolithography processes, which allow for high-resolution displays of over 2,000 pixels per inch. Vertical stacking of OLEDs by the photolithography process is technically challenging, as OLEDs are vulnerable to moisture, oxygen, solutions for photolithography processes, and temperatures over 100°C. In this study, we develop a low-temperature processed Al 2 O 3 /SiN x bilayered protection layer, which stably protects the OLEDs from photolithography process solutions, as well as from moisture and oxygen. As a result, transparent intermediate electrodes are patterned on top of the OLED elements without degrading the OLED, thereby enabling to fabricate the vertically stacked OLED. The aperture ratio of the full-color-driven OLED pixel is approximately twice as large as conventional sub-pixel structures, due to geometric advantage, despite the TFT integration. To the best of our knowledge, we first demonstrate the TFT-driven vertically stacked full-color OLED.

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P-211L:Late-News Poster: Exploring the Pixel Density Limitations of SBS AMOLED for VR Application

Cited by 3 publications

References 6 publications

82‐5: Late-News Paper: High‐Resolution Printing for Future Processing of RGB OLED Displays

82‐5: Late-News Paper: High‐Resolution Printing for Future Processing of RGB OLED Displays

Experimental analysis of dark frame growth mechanism in organic light-emitting diodes

Thin-film transistor-driven vertically stacked full-color organic light-emitting diodes for high-resolution active-matrix displays

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