P-206L:<i>Late-News Poster</i>: QVGA AMOLED Displays Using the Carbon Nanotube Enabled Vertical Organic Light Emitting Transistor

McCarthy, Mitchell A.; Liu, Bo; Cheney, David; Lemaitre, Maxime G.; Jayaraman, Ramesh; Mativenga, Mallory; Geng, Di; Kim, Jeonggi; Kim, Hyo Min; Jang, Jin; Rinzler, Andrew G.

doi:10.1002/sdtp.11071

Cited by 10 publications

(16 citation statements)

References 6 publications

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“…The year 2016 has seen the showcase at the same time of two distinct Active-Matrix OLET (AM-OLET) display prototypes at Society for Information Display Week in San Francisco (USA). ETC srl (Italy) [144] and NVerPix (USA) [145] have used a conventional planar OLET and a v-OLET to demonstrate active matrix addressing in red and green AM-OLET, respectively, on a mobile display size scale. Undoubtedly, this represents an important proof-of-principle of the potentials of the OLET platform in the field of active matrix display; nevertheless, a real implementation is yet to come.…”

Section: Discussionmentioning

confidence: 99%

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Soldano

2021

Materials

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Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

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Section: Discussionmentioning

confidence: 99%

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Soldano

2021

Materials

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“…These key advantages assist in simplifying the device architecture that will lower the cost and open up promising opportunities for future flat panels and flexible display technologies. [29,58,59] In 2003, Hepp et al observed the light emission occurring near the edge of the drain electrode in a transistor device. [60] Following this work, research in OLET has gained attention and progressed slowly but steadily over the years with encouraging electrical and luminescent characteristics.…”

Section: Introductionmentioning

confidence: 99%

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Ganesan

Tsao

Gao

2021

Adv Funct Materials

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Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-κ dielectric on the device performance. Source-drain electrode engineering such as symmetric/asymmetric, planar/ non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable lightemitting area. Transistors utilizing high-κ dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-κ -dielectrics, and device architectural engineering.

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“…Hence, OLETs could be a key part of the development of next-generation AM display technology [29]. Indeed, a proof-of-principle device was recently developed using carbon nanotubes (CNTs, Figure 2), delivering a CNT-based vertical-type OLET (CNT-VOLET) [31][32][33][34]. In the CNT-VOLET, a dilute network of CNTs is used as a source electrode, leading to several improvements, such as a high on/off ratio, attributed to the gate-bias-induced modulation of the lateral (or horizontal) Schottky barrier height [31,32].…”

Section: Introductionmentioning

confidence: 99%

Vertical-Type Organic Light-Emitting Transistors with High Effective Aperture Ratios

Park¹,

Lee²,

Na³

et al. 2020

Liquid Crystals and Display Technology

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The inherent complexity of the structures of active-matrix (AM) organic lightemitting diode (OLED) displays severely limits not only their size but also device performance. Surface-emitting organic light-emitting transistors (OLETs) may offer an attractive alternative to AM displays. We report some characteristics of vertical-type OLETs (VOLETs) composed of a source electrode of low-dimensional materials and an emissive channel layer. With a functionalized graphene source, it is shown that the full-surface electroluminescent emission of a VOLET can be effectively controlled by the gate voltage with a high luminance on/off ratio (10 4). The current efficiency and effective aperture ratios were observed to be more than 150% of those of a control OLED, even at high luminances exceeding 500 cd m −2. Moreover, high device performance of micro-VOLET pixels has been also successfully demonstrated using inkjet-patterned emissive channel layers. These significant improvements in the device performance were attributed to the effective gatevoltage-induced modulation of the hole tunneling injection at the source electrode.

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P-206L:Late-News Poster: QVGA AMOLED Displays Using the Carbon Nanotube Enabled Vertical Organic Light Emitting Transistor

Cited by 10 publications

References 6 publications

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Vertical-Type Organic Light-Emitting Transistors with High Effective Aperture Ratios

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