P‐2: Effect of Buffer Layer on Performance and Reliability of Flexible a‐IGZO TFTs Fabricated on Colorless Polyimide of G4.5

Abstract

A series of gas barrier films on colorless polyimide substrates are studied at G4.5 backplane. The performances of barrier layer and TFT are identified by the film-forming temperature, film structure, -SiOx (100nm-500nm) barrier layer on cPI are calculated to be 8.5×10 −5 g/(m²-day) at 37.8℃/100% RH, the NBTIS are improved after LLO and are deterioration after WVTR test. It is believed that the moisture and hydrogen reliabilities, NBTIS and WVTR. The use of a SiNx-SiOx (100nm-500nm) at PECVD temperature 285/295℃ resulted in the best light transmittance and reliabilities, and the electrical properties of a-IGZO TFTs on glass is better than on cPI. The WVTR value of the SiNx diffusion from the underlying layers including cPI and environment atmosphere can be effectively suppressed by SiNx-SiOx (100nm-500nm) barrier, and a flexible array backplane is demonstrated by means of these methods.

A Flexible Smart Sensor System Based on Hybrid Integration of Organic and Metal-Oxide Transistors

“…Moreover, an inorganic gas barrier layer must be used on top of polyimide substrate to block the diffusion of residual molecules from polyimide to semiconducting layers. [47,48] The coefficient of thermal expansion (CTE) of polyimide is 2-6 x 10 -5 /K which is around 10 2 /K larger than the CTE of SiO 2 (3 x 10 -7 /K), the gas barrier layer on the top of polyimide substrate used here. [49][50][51] As depicted in Fig.…”

Highly transparent, ultra‐thin flexible, full‐color mini‐LED display with indium–gallium–zinc oxide thin‐film transistor substrate

“…The IGZO TFT has advantages in terms of electron mobility and low-temperature fabrication process, which are considered to be suitable for large-screen display and flexible display. 28,29 Moreover, the patterned IGZO TFT has a distinct advantage: it could be fabricated at low temperatures. The cross-section of IGZO TFT structure on backplane is shown in Figure 3 bonded onto the backplane by solder paste proceed with transferred and aligned to the pattern of the substrate, forming an electrical connection in reflow soldering process.…”

“…The IGZO TFT has advantages in terms of electron mobility and low‐temperature fabrication process, which are considered to be suitable for large‐screen display and flexible display 28,29 . Moreover, the patterned IGZO TFT has a distinct advantage: it could be fabricated at low temperatures.…”

9‐3: Advanced Process and Structure of Backplane for Micro LED Display

“…Different from the complex structure of OLED display, the existing AM Micro LED display has not been reported in HTHHO test, especially when IGZO TFT is used as the driving backplane which is sensitive to water and oxygen [2] . In this paper, we will start from the high temperature and high humidity test to study the influence of different protect methods on the drive backplane stability of Micro LED display.…”