P‐196: <i>Late‐News Poster:</i> Off Current Reduction of BG poly‐Si TFT by PLAS Process

Mochii, Ryosuke; Fujii, Mami N.; Ishikawa, Yoshihiro; Sugawara, Y.; Nodera, Nobutake; Matsumoto, Takao; Uraoka, Yukiharu

doi:10.1002/sdtp.12450

Symp Digest of Tech Papers

2018

DOI: 10.1002/sdtp.12450

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P‐196: Late‐News Poster: Off Current Reduction of BG poly‐Si TFT by PLAS Process

Ryosuke Mochii

Mami N. Fujii

Yoshihiro Ishikawa

et al.

Abstract: We have examined, for the first time, by using a device simulation, the structure of back‐gated poly‐Si TFT that can be fabricated only by using Partial Laser Anneal Silicon (PLAS) process to reduce the off current of the TFT.

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Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes

Yeh¹,

Ohtoge²,

Magari³

2022

Jpn. J. Appl. Phys.

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Single-crystal Si (c-Si) bottom-gate thin-film transistors (BG-TFTs) were fabricated using all sputtering processes. Laser doping from sputter-deposited Sb-doped amorphous Si film was proposed, by which n+ c-Si with resistivity and contact resistivities of 1.5 × 10-3 Ωcm and 2.1 × 10-5 Ωcm2, respectively, were fabricated. In addition, thin (50 nm) and low-heat conductive titanium was proposed for BG to realize continuous lateral crystal growth at the gate edge. The fabricated n-channel c-Si BG-TFTs exhibited a field-effect mobility of 75±21 cm2/Vs, subthreshold swing of 0.612±0.110 V/dec, and threshold voltage of 5.9 V. Lack of bottom Si/SiO2 interface quality was indicated to be the origin of insufficient mobility.

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Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes

Yeh¹,

Ohtoge²,

Magari³

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

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P‐196: Late‐News Poster: Off Current Reduction of BG poly‐Si TFT by PLAS Process

Abstract: We have examined, for the first time, by using a device simulation, the structure of back‐gated poly‐Si TFT that can be fabricated only by using Partial Laser Anneal Silicon (PLAS) process to reduce the off current of the TFT.

Cited by 1 publication

References 10 publications

Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes

Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes

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