P‐185L: <i>Late‐News Poster</i>: Direct Patterning of Metal Electrodes for TFT‐LCD Fabrication

Moon, Taeho; Nam, Seong-Hee; Kim, Nam-Kook; Kook, Yun-Ho; Jung, Young-Ki; Chang, Youn‐Gyoung; Yoo, Sun-Kook; Kim, Chang‐Dong; Kang, In‐Byeong; Chung, In‐Jae

doi:10.1889/1.3256550

Cited by 13 publications

(7 citation statements)

References 9 publications

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“…However, conventional printing methods such as inkjet, flexography, and gravure printing provide only limited linewidth resolution (>>10 µm), suffer from poor edge definition and are prone to ink/solute–substrate surface interactions that lead to uneven cross sections such as “coffee‐ring” or dome shapes. Novel printing methods have been developed to overcome these limitations, such as high‐resolution engraved gravure, super inkjet, microcontact, and reverse‐offset printing (ROP) . Especially ROP has multiple advantages over the conventional printing methods as it can i) allow patterning of large area, ii) provide sub‐micrometer resolution and uniform layer thickness, and iii) result in patterns with good edge definition regardless of the printed feature size.…”

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confidence: 84%

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Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

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Reverse‐offset printing (ROP) is a novel printing technique capable of forming electronics‐industry‐relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen‐plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal‐oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface‐energy measurements and Fourier transform infrared spectra of the ink during drying. Thin‐film transistors (TFTs) fabricated using a roll‐to‐plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF‐ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide‐type substrate, respectively. TFTs on the flexible substrate with also the S/D‐contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll‐to‐roll‐compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal‐oxide circuits as required by flexible high‐resolution sensor arrays and displays.

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confidence: 84%

“…For a long time, only inks containing either dispersed metal nanoparticles or organic polymers were reported to be deposited using ROP . These types of inks allow the formation of the semi‐dry state as strong cohesion arises due to solute‐solute interactions, when the solvent content diminishes through evaporation and absorption to PDMS.…”

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confidence: 99%

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

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“…To our knowledge, the concept of ROP has first appeared in 1980. 1) Until now, ROP has been extensively developed mainly in industrial sectors, and various patents on inks, processes, machinery, and applications have been actively filed from the late 1990 s-2010 s. ROP was first applied to create color filters for liquid crystal displays; since then, ROP has been used in thin film transistors, [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] sensory applications, [18][19][20][21] printed memories, [22][23][24][25] touch panels, [26][27][28][29] etching resist, 7,30,31) organic light emitting diode, 32) quantum dots, 33) meta-material absorbers, 34) antennas, 35) electrodes for photovoltaics, 36,37) protein patterning, 38) and seed layers for electroless plating 2) and electroplating 39) as the remarkable resolution of ROP is being gradually recognized by various communities. Currently, many examples of printed devices exist, where entire devices or their parts were made by ROP, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

Kusaka

Fukuda

Ushijima

2020

Jpn. J. Appl. Phys.

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Mechanisms, materials, and processes of high-resolution printing techniques dedicated to printed electronics are reviewed. Advanced printing methods, including reverse offset printing and adhesion contrast planography, use absorption of ink solvents by polydimethylsiloxane (PDMS) to semi-solidify inks before ink-transfer. The patterning principle transforms from wetting to adhesion and fracture; resolution problems encountered during the patterning of liquid inks (e.g. spreading, splitting, coalescence, bulges, and coffee ring shapes) can be avoided, and single-μm features can be achieved. After summarizing the fundamentals of reverse offset printing, details on the patterning mechanism and contact mechanics encountered during the process are shown together with the design concept of the ink formulation. Complementary processes for multilayered electronic devices (e.g. wet-on-wet for high-throughput production, buried electrode formation, taper formation, and vertical interconnections) and the prediction of pattern size integrity are presented.

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“…However, mass production roll-to-roll (R2R) processes have limits for the printing resolution and surface morphologies of the printed patterns. Recently, Moon et al [24] analyzed a new direct printing method using Ag nanopowder ink for metal electrodes; this was a modified version of the conventional gravure offset printing. First, they coated a soft blanket roll with Ag ink and rolled it onto a glass cliché with electrode patterns.…”

Section: Introductionmentioning

confidence: 99%

Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter

et al. 2016

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We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

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P‐185L: Late‐News Poster: Direct Patterning of Metal Electrodes for TFT‐LCD Fabrication

Cited by 13 publications

References 9 publications

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter

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