P‐15: Thermal Conductivity Measurement of Indium‐Gallium‐Zinc‐Oxide Thin Films Utilizing Three‐Omega Method

Abstract

The temperature dependence of cross-plane thermal conductivity of Indium-Gallium-Zinc-Oxide (IGZO) thin film was measured using a differential three-omega method. The IGZO thin films were deposited on Al2O3 substrate by DC sputtering in room temperature. The thermal conductivities were observed to be 1.6, 1.8 and 2.6 W/(m•K) at some different oxygen partial pressures, 0%, 10%, and 65%, respectively. Furthermore, the thermal conductivity of IGZO thin film is decreasing with increasing the measurement ambient temperature according to the crystalline material typical characteristics. These results notify that a crystallinity exists inside the IGZO films and this crystalline phase governs the heat conduction into IGZO films.