P‐15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Abstract

The effects of fluorination on elevated-metal metal-oxide (EMMO) thin-film transistors (TFT) were investigated. Attributed to the effective passivation of defects in the metal oxide, both the scalability and the reliability were enhanced on fluorinated indium-gallium-zinc oxide (IGZO) and indium-tinzinc oxide (ITZO) EMMO TFTs.

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

“…When normalized by the total area of the spectrum, the percentage area of OII is commonly used as an indicator of the defectpopulation in the samples. As reported previously [9], the defectpopulation in IGZO:F (14.7%) is less than that in IGZO (17.0%). This difference may be partially responsible for the difference between the electrical behavior shown in Figures 1a and 1b.…”

“…Besides the reported passivation by fluorination of the oxygen (O) related defects [8] [9], it is shown presently that IGZO:F obtained using the reported optimal fluorination time of 10 minutes [8] also exhibits significantly improved intrinsic resistance against the incorporation of H. Compositional depth profiling using secondary-ion-mass spectrometry (SIMS) reveals that the H content in the IGZO is reduced by a fluorination treatment. This improves the control of the inevitable presence and distribution of H in a TFT.…”

“…IGZO:F [7] [8]. TFTs fabricated with IGZO:F have been shown to exhibit significantly improved reliability against electrical, thermal and illumination stress [9]. In this work, a silanebased process for the plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxide layer and a thick a-Si:H layer have been employed to simulate the H-rich environment to which a TFT would be exposed during the fabrication of photo-diodes based on a-Si:H [10].…”

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

“…Indium oxide (In 2 O 3 ) films have high electron mobility, high carrier density, and excellent optical transmittance compared with other oxide semiconductors [17,18], making them an ideal material for transparent thin film transistors [19]. In order to obtain high-quality In 2 O 3 films, other elements are added, such as InSnO (ISO) [20][21][22], InZnSnO (IZTO) [23][24][25][26], InGaZnO (IGZO) [27][28][29][30], etc.…”

P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor

“…Measurement results at wo S settings. [4], including better reliability, reduced sensitivity to hydrogen contamination and a more positive on . Hitherto its effects on off has not been investigated.…”