2006
DOI: 10.1889/1.2433608
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P-135: Fast Bend Transition of the Pi-Cell at Low Temperature

Abstract: We have developed fast bend transition method of pi‐cell in low temperature. This cell requires a transition of the liquid crystals (LC) from an initial splay state to bend transition before normal driving operation. This study analyzed the conditions under which this transition is generated in low temperature. Consequently, a method of fast bend transition by applying waveform that make the most of LC's dynamic response, using structure of top‐gate electrode and surface alignment in Low Temperature Poly‐Silic… Show more

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Cited by 3 publications
(1 citation statement)
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“…However, the bend state should be initiated and grown under a high warm-up applied voltage ($20 V) until the splay state is fully removed after a certain warm-up time. 3) To maintain the bend state at a low voltage (V < V cr ), a maintenance bias or pulse voltage (V > V cr ) is necessary. 4,5) The nonbias-bend (NBB) method has been proposed to eliminate the warm-up time and the maintenance bias.…”
Section: Introductionmentioning
confidence: 99%
“…However, the bend state should be initiated and grown under a high warm-up applied voltage ($20 V) until the splay state is fully removed after a certain warm-up time. 3) To maintain the bend state at a low voltage (V < V cr ), a maintenance bias or pulse voltage (V > V cr ) is necessary. 4,5) The nonbias-bend (NBB) method has been proposed to eliminate the warm-up time and the maintenance bias.…”
Section: Introductionmentioning
confidence: 99%