P‐13: High Performance Ink‐Jet‐Printed TFTs on Solution Wetting Polymer Gate Dielectric Layer

Abstract

We have demonstrated high performance C 60 thin-film transistors by inkjet-printing technology.C 60 inks was jetted onto a polymer or self-assembled monolayers gate dielectric layer, then vacuumdried to form uniform thin films. Inkjet-printed C 60 thin-film transistors on a polymer gate dielectric layer showed an electron mobility of 1.6 cm 2 /Vs in operating voltage of 5 V. These results are attributed to high uniformity of vacuum-dried C 60 thin films and low charge trap density between C 60 thin films and gate dielectric layer interface. P-13 / W. Kang SID 2012 DIGEST • 1095