P‐13: Electrical Characteristics and Stability of Double‐Gate a‐IGZO Thin Film Transistors with Self‐Aligned Top‐Gate

Abstract

In this paper, the electrical characteristics and stability of doublegate (DG) a-IGZO TFTs with self-aligned top-gate are investigated. The stability of DG TFTs deteriorated as the a-IGZO layer thickness decreased from 40nm to 20nm, and an abnormal positive Vth shift under NBS might be due to the ion migration in stronger vertical electric field.