P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

Abstract

It was found that the mechanism of lowering contact resistance between TCO and Mo/Al/Mo layer is the side ring contact between TCO and top Mo of Mo/Al/Mo. This is contrary to the previous results that used Mo x Al y interfacial layer to explain the low contact resistance of TCO and Mo/Al/Mo layer.[2] H.