P‐10.1: Low‐voltage flexible thin‐film transistor based on C₃N₄/polyvinylpyrrolidone composite electrolyte

Abstract

The aqueous‐solution‐processed graphitic carbon nitride/polyvinylpyrrolidone (C3N4/PVP) composite dielectric membrane exhibits a large specific gate electric double layer capacitance of 2.68 μF/cm2 at 20 Hz. The indium zinc oxide (IZO) thin film transistor (TFT) fabricated on the polyethylene terephthalate (PET) substrate exhibits good electrical properties and high stability by using composite dielectric as gate dielectric. Flexible IZO‐TFT has a low threshold voltage of 0.28 V, a low subthreshold swing of 149 mV/decade. Finally, an inverter with a maximum voltage gain of 14.8 is obtained on basis of the flexible IZO TFT when VDD = 4 V. These flexible oxide‐based TFTs obtained using C3N4/PVP can be potentially applied in portable electronics with low power consumption.