P‐1: Distinguished Poster: Fabrication of a Self‐Aligned ZrInZnO Thin‐Film Transistor Using Polypropylene Carbonate Solution

Abstract

To fabricate a self‐aligned oxide semiconductor thin‐film transistor (TFT) using a solution process, we developed a novel diffusion method to dope ZrInZnO source and drain regions. In this method, Sn was allowed to diffuse into ZrInZnO from a solution of Sn mixed with polypropylene carbonate. The sheet resistance of the Sn‐containing ZrInZnO was reduced dramatically from 1 MΩ/□ to 6.8 KΩ/□. The self‐aligned ZrInZnO TFT exhibited a mobility of 20 cm2•V−1•s−1, a threshold voltage of 1 V, a subthreshold swing of 0.2 V/decade, and an on‐to‐off current ratio of 7.

P‐5: Oxide Semiconductor/Polypropylene Carbonate Paste for A Thin‐Film Transistor using Screen Printing

“…Figure 2 shows molecular structure of PPC. PPC decomposes to H 2 O and CO 2 , and the contamination that affects the semiconductor characteristics does not remain at temperatures less than 300 o C [4][5] . For these reasons, we proposed to use PPC for a thickener of our semiconductor paste.…”

“…We assumed that the thickener becomes the origin of the contamination. Therefore, Polypropylene carbonate paste (PPC) was used as a thickener since PPC is expected to decompose completely without leaving any contamination in a semiconductor film after sintering [4][5] .…”

Fabrication of source and drain regions of self-aligned ZrInZnO thin-film transistors using a solution of tin and poly(propylene carbonate)

“…Doping ZrInZnO by using the Sn:PPC solution was briefly introduced elsewhere. 35) In this paper we will discuss more details about this novel method.…”