Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen

Okada, Yoshio; Tobin, Philip J.; Hegde, Rama I.; Liao, Jimmy C.; Rushbrook, P.

doi:10.1063/1.107946

Cited by 44 publications

(18 citation statements)

References 9 publications

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“…For example, a 5 improvement in is seen for 950 C anneal over thermal oxide. Higher N O processing temperature have been reported to cause a higher amount of nitrogen incorporation at the SiO /Si interface [9], which explains the improvement seen in Fig. 4(a).…”

Section: B Reliabilitymentioning

confidence: 60%

“…Several alternatives have been suggested to overcome this disadvantage. Some of reported approaches include RTP for N O oxide growth [1], N O anneal of a pre-oxide [2]- [4], [8], N O O ambient for oxide growth [9], etc., or combinations thereof. A work by Tobin et al [10] suggested that N O flow rate is a key factor in determining the amount of nitrogen incorporated during an N O process.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of RIE-damage by N/sub 2/O-anneal of thermal gate oxide

Joshi

Mann

Chung

et al. 1998

IEEE Trans. Semicond. Manufact.

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We have investigated RIE-induced damage in MOS devices with thermal oxide as well as N2O-annealed oxide as gate dielectrics. A systematic improvement in robustness against RIEinduced damage is seen when N2O flow rate and/or N2O anneal temperature are increased. We have demonstrated a N2O anneal process at 900 C, which provides a robust SiO2/Si interface against plasma damage and hot carrier stress.

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Section: B Reliabilitymentioning

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Reduction of RIE-damage by N/sub 2/O-anneal of thermal gate oxide

Joshi

Mann

Chung

et al. 1998

IEEE Trans. Semicond. Manufact.

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“…The secondary ion yields of SIMS are strongly dependent on the composition of the matrix. According to literature and the authors' experience, it is advantageous to use molecular ions (CsM + ) for the quantification, since they show less pronounced matrix effects [6,7]. Nevertheless, the dependence of the sensitivity factors on the composition of the samples has to be established prior to quantification.…”

Section: Resultsmentioning

confidence: 99%

Quantitative SIMS depth profiling of diffusion barrier gate-oxynitride structures in TFT-LCDs

et al. 2004

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Gate oxynitride structures of TFT-LCDs were investigated by SIMS, and successful solutions are demonstrated to overcome difficulties arising due to the charging effects of the multilayer systems, the matrix effect of the method, and the small pattern sizes of the samples. Because of the excellent reproducibility achieved by applying exponential relative sensitivity functions for quantitative analysis, minor differences in the barrier gate-oxynitride composition deposited on molybdenum capped aluminium-neodymium metallisation electrodes were determined between the centre and the edge of the TFT-LCD substrates. No differences were found for molybdenum-tungsten metallisations. Furthermore, at the edge of the glass substrates, aluminium, neodymium, and molybdenum SIMS depth profiles show an exponential trend. With TEM micrographs an inhomogeneous thickness of the molybdenum capping is revealed as the source of this effect, which influences the electrical behaviour of the device. The production process was improved after these results and the aging behaviour of TFT-LCDs was investigated in order to explain the change in control voltage occurring during the lifetime of the displays. SIMS and TEM show an enrichment of neodymium at the interface to the molybdenum layer, confirming good diffusion protection of the molybdenum barrier during accelerated aging. The reason for the shift of the control voltage was finally located by semi-quantitative depth profiling of the sodium diffusion originating from the glass substrate. Molybdenum-tungsten was a much better buffer for the highly-mobile charge carriers than aluminium-neodymium. Best results were achieved with PVD silicon oxynitride as diffusion barrier and gate insulator deposited on aluminium-neodymium metallisation layers.

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“…These processes result in the accumulation of nitrogen near the Si/SiO 2 interface. The analysis of this interfacial nitrogen is typically accomplished using secondary ion mass spectroscopy ͑SIMS͒, 4 Auger electron spectroscopy ͑AES͒, [8][9][10][11] x-ray photoelectron spectroscopy ͑XPS͒, 12,17 or nuclear reaction analysis ͑NRA͒. 13 All of these techniques are either destructive and/or relatively time consuming.…”

Section: Introductionmentioning

confidence: 99%