Oxygen-vacancy-related dielectric anomalies in La:SrTiO3

Abstract

Effects of 2 nm size added heterogeneity on non-exponential dielectric response, and the dynamic heterogeneity view of molecular liquids J. Chem. Phys. 137, 104502 (2012) Radiowave dielectric investigation of water confined in channels of carbon nanotubes J. Chem. Phys. 137, 094908 (2012) Effect of Pr substitution on structural and dielectric properties of SrTiO3 J. Appl. Phys. 112, 044106 (2012) Response delay caused by dielectric relaxation of polymer insulators for organic transistors and resolution method Appl.

Dielectric loss modes of SrTiO3 thin films deposited on different substrates

“…However, recently, some of the present authors confirmed that this dielectric loss peak is actually related to oxygen vacancies, due to its disappearance after lengthy annealing in an oxidizing atmosphere. 17 For STO thin films obtained from different deposition processes, the preparation conditions including partial pressures of oxygen atmosphere, the cooling rate, etc., may vary greatly for different samples; this has influence on the concentration of the oxygen vacancies. It is reasonable to assume that the difference in the concentration of oxygen vacancies leads to the appearance of mode I in some samples and disappearance in other samples.…”

Annealing effects, anomalous dielectric properties and conductivity of As-diluted lead phosphate Pb3(P1–xAsxO4)2

“…However, precise determination of the absolute values of the bulk conductivity is difficult because in the temperature range 400-800 K large frequency dependent dielectric anomalies occur [10][11][12][13]. Such anomalies are qualitatively similar to those observed in perovskite-type crystals [3][4][5][14][15][16][17]. In general these anomalies can be due to complex dispersion phenomena in the bulk of the crystals [3-5, 15, 17] as well as to artefacts such as space charge relaxations in the crystal-electrode interface or disturbed layers close to the crystal surface [14,16,18].…”

“…It is well known that point defects strongly modify the conductive and dielectric properties of oxide materials and that the slow kinetics of such defects can determine the relaxation behavior of different physical properties and structural transformations [1][2][3][4][5].…”

Materiales de titanato de estroncio dopados con escandio: estructura, microestructura y propiedades dielectricas

“…Dielectric properties of nonstoichiometric ST ceramics are evaluated as a function of temperature and frequency in the radio frequency range. 3 . In this case, strontium vacancies are introduced as charge compensation.…”