Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods

Abstract

In arrays of multi-domain nanowires static antimony doping in combination with mobile doping stemming from oxygen vacancies is utilized to achieve bipolar memristive properties resulting from oxygen vacancy injection in an undoped tin oxide domain.

Tin Oxide Nanorod Array-Based Photonic Memristors with Multilevel Resistance States Driven by Optoelectronic Stimuli

“…This suggests that, unlike the electroforming process which initiates the device by creating the conductive filaments across the entire length of the active layer, the SET and RESET processes are known to occur locally, and therefore, the length of the active layer does not affect the operating voltages. , In addition, the difference in the lengths (20 nm) among these nanorod arrays is possibly negligible to observe any array length-dependent SET and RESET voltages. The Al/SnO x /FTO devices exhibited SET/RESET voltages as low as 0.7 ± 0.1/–0.6 ± 0.1 V. These values are much lower than the reported values for tin oxide-based resistive memory devices, and therefore, our devices have the potential for low-power operations. ,, The existing reports are mostly focused on the preparation of tin oxide nanostructures by chemical routes. On the contrary, the e-beam evaporation process as employed in this work, like sputtering, plausibly induces a higher concentration of defects and facilitates reversible and reproducible switching at the lower voltages without causing much damage to the SnO x active layer.…”

“…The Al/SnO x / FTO devices exhibited SET/RESET voltages as low as 0.7 ± 0.1/−0.6 ± 0.1 V. These values are much lower than the reported values for tin oxide-based resistive memory devices, and therefore, our devices have the potential for low-power operations. 19,39,40 The existing reports are mostly focused on the preparation of tin oxide nanostructures by chemical routes. On the contrary, the e-beam evaporation process as employed in this work, like sputtering, plausibly induces a higher concentration of defects and facilitates reversible and reproducible switching at the lower voltages without causing much damage to the SnO x active layer.…”

“…Resistive switching (RS) in SnO x -based devices is attributed to electric field-driven growth and rupture of oxygen vacancy-rich conductive filaments inside the active oxide layer. 19 Improvement of the memristive device parameters by making use of their optical properties is an effective and feasible approach. In addition, memristors based on 1D nanostructures with high aspect ratios facilitate the investigation of the physical mechanism of the ionic dynamics at the nanoscale, due to the higher spatial localization of the switching events.…”

“…Although resistive switching has been studied extensively in TiO x , HfO x , NiO, and TaO x , tin oxide (SnO 2 ) is relatively less explored. − SnO 2 , a wide-bandgap semiconductor, is generally used as a transparent layer for sensor, photovoltaic, and photodetector applications. , As an active layer in a memristor, tin oxide has not received much attention due to its high power consumption, lower endurance, and device-to-device variability compared to other metal oxides. Resistive switching (RS) in SnO x -based devices is attributed to electric field-driven growth and rupture of oxygen vacancy-rich conductive filaments inside the active oxide layer . Improvement of the memristive device parameters by making use of their optical properties is an effective and feasible approach.…”

Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy

“…Oxygen vacancies, as common non-stoichiometric defects, in transition metal oxides play a crucial role in the resistive switching (RS) phenomenon and determining the performance of resistive random access memory (RRAM) devices. [1][2][3][4][5][6][7][8][9][10] It is believed that the electrochemical migration of oxygen vacancies or oxygen ions in the oxide layer can control the Schottky barrier characteristics or induce the occurrence of redox reactions, giving rise to the valence change phenomenon. 11,12 Besides, for some oxide-based RRAMs, the RS behavior is caused by the creation and rupture of the conducting filaments composed of oxygen vacancies with high concentrations and good electrical conductivity.…”