Oxygen vacancy induced dielectric relaxation studies in Bi4−xLaxTi3O12 (x = 0.0, 0.3, 0.7, 1.0) ceramics

Bhardwaj, Sumit; Paul, Joginder; Chand, Subhash; Raina, K. K.; Kumar, Ravi

doi:10.1007/s10854-014-2205-7

Cited by 20 publications

(7 citation statements)

References 38 publications

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“…It’s associated to ionic conductivity, which is caused by the loss of oxygen during high-temperature sintering. Thus, this defect plays an important role in the conductivity of LST, which causes the dielectric loss increase [19]. Between 600 and about 680 °C, tanδ slightly decreases with increasing temperature, which is due to the decreasing of the relaxation time [16,20].…”

Section: Resultsmentioning

confidence: 99%

Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

Gao

et al. 2015

Materials

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La1−xSrxTiO3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant εr and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52–88 and 6.5 × 10−3, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material.

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Section: Resultsmentioning

confidence: 99%

Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

Gao

et al. 2015

Materials

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“…3), соответственно и накоплению большего пространственного заряда. Это приведет к увеличению явления релаксации пространственного заряда Максвелла−Вагнера в системе [20]. Следовательно, одной из вероятных причин высоких значений ε ′ у образцов с большей концентрации Sm, особенно в области низких частот, является Максвелл−Вагнеровская релаксация пространственных зарядов, накапливающихся на границах зерен.…”

Section: диэлектрические свойстваunclassified

Структура и диэлектрические свойства наноструктурированной керамики Bi-=SUB=-1-x-=/SUB=-Sm-=SUB=-x-=/SUB=-FeO-=SUB=-3-=/SUB=-

Sadykov¹,

Алиханов²,

Kallaev³

et al. 2019

Физика Твердого Тела

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The structure and dielectric properties of polycrystalline multiferroics of the Bi1-xSmxFeO3 system (x = 0-0.2) are investigated. X-ray diffraction revealed that two phases coexist in the x = 0.1 nanostructured sample: rhombohedral R3c and orthorhombic Pbam. On the temperature dependences of the dielectric constant ε'(T), four anomalies characteristic of phase transformations were found in the temperature range of ~ 180°С, ~ 250°С, ~ 300°С and TN ~ 350°С. It is shown that with increasing samarium concentration, the dielectric constant ε' increases, and tgδ decreases

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“…Formally, typical behaviors of dielectric loss (ε ‫״‬ ) and the dissipation factor for all samples are obviously illustrated in Figures (2 & 3) respectively. The noticed higher values of tan δ at the low frequency range for all samples may be due to the presence of some defects such as oxygen vacancies that plays an important role in the conductivity [23]. The alternating-current conductivity is known to be related to the dissipation factor according to the equation [24], [5] The increase in the conductivity is smaller than that of frequency, and hence tan δ decreases with increasing frequency.…”

Section: Frequency Dependences Dielectric Parametersmentioning

confidence: 99%