Oxygen vacancy enhancing CO2 electrochemical reduction to CO on Ce-doped ZnO catalysts

Doping of Vanadium into Bismuth Oxide Nanoparticles for Electrocatalytic CO2 Reduction

“…Clearly, all V-doped Bi 2 O 3 samples exhibited a lower Tafel slope than that of undoped Bi 2 O 3 , indicating the improvement of kinetic activity for electrocatalytic CO 2 reduction on V-doped Bi 2 O 3 . Moreover, the Tafel slope of Bi 2 O 3 -V 2 is calculated to be 126.6 mV dec –1 , which is in the neighborhood of the theoretical value of 120 mV dec –1 , signifying that the first electron-transfer process ought to be the rate-determining step. , Generally, the activation process of CO 2 adsorbed on the active site of the catalyst and obtaining an electron is the first process of CO 2 reduction to formate. − As such, from the kinetic point of view calculated from the Tafel slope, the doping of V changes the electronic structure around Bi active site, thereby accelerating the activation of CO 2 and promoting the CO 2 reduction performance of the Bi 2 O 3 catalyst to formate. It is corroborated with the enhanced CO 2 adsorption capacity of Bi 2 O 3 after V doping indicated by the above CO 2 -TPD test results.…”

Enhanced CO2 electrolysis with synergistic doping in perovskite cathode materials

“…LSC 0.2 F 0.8 presents a current efficiency of 98.2%, which is B23% higher than that of LSC. This means that the oxygen vacancy which is formed by the reduction of iron ions at high temperature could be active for breaking the CQO bonds of CO 2 to form CO. [42][43][44][45] By comparison, the decreased performance of CO 2 to CO conversion for LSF may be due to some of the Fe 2+ present on the electrode surface being oxidized to Fe 4+ .…”

Efficient photoreduction of hexavalent uranium over defective ZnO nanoparticles by oxygen defect engineering

“…Vacancy engineering is a good method to tailor the band gap and improve the photocatalytic efficiency. [29][30][31][32][33] Due to the existence of O V , defect energy levels can be formed on the semiconductor, thereby expanding the photoresponse range of the semiconductor. Meanwhile, surface O V with typical defect states can trap electrons or holes, thereby enhancing the electron-hole separation efficiency.…”