2018
DOI: 10.1039/c7ra10641f
|View full text |Cite
|
Sign up to set email alerts
|

Oxygen vacancy and doping atom effect on electronic structure and optical properties of Cd2SnO4

Abstract: The electronic structure and optical properties of oxygen vacancy and La-doped Cd2SnO4 were calculated using the plane-wave-based pseudopotential method based on the density functional theory (DFT) within the generalized gradient approximation (GGA).

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
8
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 21 publications
(8 citation statements)
references
References 46 publications
0
8
0
Order By: Relevance
“…Pure Cd 2 SnO 4 belongs to an orthogonal structure with the Pbam space group. 52 The parameter setting of plane-wave cutoff energy is 750 eV, which was carried out for geometric optimization. The optimized values of lattice parameters are 5.698, 10.180, and 3.271 Å, corresponding to a, b, and c respectively.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Pure Cd 2 SnO 4 belongs to an orthogonal structure with the Pbam space group. 52 The parameter setting of plane-wave cutoff energy is 750 eV, which was carried out for geometric optimization. The optimized values of lattice parameters are 5.698, 10.180, and 3.271 Å, corresponding to a, b, and c respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The Cd 4p 6 4d 10 5s 2 , Sn 4d 10 5s 2 5p 2 , and O 2s 2 2p 4 are candidates to become valence electronics. Pure Cd 2 SnO 4 belongs to an orthogonal structure with the Pbam space group 52 . The parameter setting of plane‐wave cutoff energy is 750 eV, which was carried out for geometric optimization.…”
Section: Resultsmentioning
confidence: 99%
“…In the linear optics field, the optical properties of a material can be described by the following dielectric function [40,41]:…”
Section: E-e F (Ev)mentioning
confidence: 99%
“…Furthermore, OVs and (cation or anion) doping also modify the electronic band structure of the parent semiconductor. [10][11][12][13][14] The dopant's orbitals may be introduced between the CB and VB or hybridized with pure analog orbitals. 15,16 Therefore, the semiconductor's bandgap can be widened or narrowed down depending on the nature of the defect.…”
Section: Introductionmentioning
confidence: 99%