Oxygen vacancies modulating the photodetector performances in ε-Ga₂O₃ thin films

Abstract

By acting as the trapping centers during change carrier transfer, the oxygen vacancy (VO) plays a critical role in oxide photoelectric devices. Herein, a post-annealing method was introduced to perfect...

Horizontally Self‐Standing Growth of Bi2O2Se Achieving Optimal Optoelectric Properties

“…The defects inside the semiconductors could act as carrier killers due to their trapping effects and scattering effects, inducing a decrease in the effective photogenerated carriers and diffusion lengths, where the associated mechanisms of charge carrier migration and recovery are quite intricate. [ 44,45 ] As shown in Figure 4e,f, flat growth of f‐Bi 2 O 2 Se on the substrate (Figure 4e) would create more trap states due to the increasing number of defects, resulting in inactive and consumptive carrier behavior originating from partial capture and scattering. Due to the reduced trap states of ss‐Bi 2 O 2 Se (Figure 4f), the consumption of photogenerated carriers was suppressed to a certain extent and thereby outputs a better photoresponse performance.…”

Anion–cation synergistic doping strategy on a Ga2O3 scaffold for improving electron extraction and transport in a CH3NH3PbCl3-based photodetector

“…On the one hand, the Zn-doping decreases the oxygen vacancies in the ZGO nanorods, which reduces the carrier recombination at the interface of the polycrystalline MAPbCl 3 and ZGO nanorods. The suppressed carrier recombination reduces the energy loss during the photoelectric conversion process, 41,42 and the photocurrent is increased. On the other hand, the Ac À anions modulate the longitudinal dimension of the ZGO nanorods, which shortens the transport distance in the device.…”

Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga2O3

“…25 With the surface treatment, the V O /L O area ratios decrease from 0.43 to 0.19. 24,26 Note that the variation of V O /L O area ratios exactly follows the changes of N TE2* . It further strengthens the correlation between E2* traps and V O -related complexes.…”

“…In Figure 4b, all O 1s core level XPS spectra are composed of a primary peak at 530.5 eV (labeled as L O ) related to lattice oxygen bonded in stoichiometric Ga 2 O 3 and a shoulder peak at 532.0 eV contributed by the presence of V O . 23,24 The V O /L O area ratio increases from 0.25 for the virgin sample S0 to 0.43 for the dry-etched sample S1, suggesting the increasing V O induced by the plasma bombardment effect during the dry etching. 25 With the surface treatment, the V O /L O area ratios decrease from 0.43 to 0.19.…”